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Part number
DistributorStockDCManufactureDescription
 
34398  ./12/13  VISHAY  TO-277A(/TO-277A/TO277A  
 
621853  12  -  -  
 
230  07  VISHAY  DO-214  
 
15758  13/14/15  VISHAY  TO-277A(S/SMPC  
 
31000  15  VISHAY  TO277A(SMPC)  
 
15758  13/14/15  VISHAY  TO-277A(S/SMPC  
 
1485  -  VISHAY  -  
 
15758  13/14/15  VISHAY  TO-277A(S/SMPC  
 
83500  17ROHS  VISHAY  TO277A  
 
33763  ./12/13  VISHAY  TO-277A(S/TO277A(SM  
 
621853  12  -  -  
 
100000  -  Vishay Semiconductor Diodes Division  -  
 
130000  2014  Vishay Semiconductor Diodes Division  DIODE SCHOTTKY 120V 12A TO277A  
 
6000  12  Vishay  TO-277, 3-PowerDFN  
 
47569  -  VISHAY  -  
 
8000  13  Vishay  -  
 
1979  2015  Vishay Semiconductors  -  
 
83500  17ROHS  VISHAY  TO277A  
 
100000  -  Vishay Semiconductor Diodes Division  -  
 
12000  12  Vishay  TO-277, 3-PowerDFN  
 
43545  12/13/14  VISHAY  TO-277A(S/TO277A(SM  
 
8000  13  Vishay  -  
 
130000  2014  Vishay Semiconductor Diodes Division  DIODE SCHOTTKY 120V 12A TO277A  
 
621853  12  -  -  
 
3000  14/15  VISHAY  TO-277A(S  
 
35000  15  VISHAY  TO-277A(S  
 
100000  -  Vishay Semiconductor Diodes Division  -  
 
50082  14/15/2015PB  VISHAY  TO-277A(S  
 
83500  17ROHS  VISHAY  TO277A  
 
130000  2014  Vishay Semiconductor Diodes Division  DIODE SCHOTTKY 12A 120V TO-277AC  
 
83500  17ROHS  VISHAY  TO277A  
 
100000  -  Vishay Semiconductor Diodes Division  -  
 
130000  2014  Vishay Semiconductor Diodes Division  DIODE SCHOTTKY 12A 120V TO-277AC  
 
26236  13/14/15  VISHAY  TO-277A(S  

 

Part information


High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES

Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology

Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Halogen-free

MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/N-M3 - halogen-free and RoHS

Part numberCircuit descriptionManufacture
V12P12 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Vishay Intertechnology
V12P12-E3/86A - -
V12P12-E3/87A - -
V12P12-M3/86A - -
V12P12-M3/87A - -
V12P12-M3/86A Diodes, Rectifier - Single Discrete Semiconductor Product 12A 120V Tape & Reel (TR) Schottky; DIODE 12A 120V SCHOTTKY TO277A. Specifications: Diode Type: Schottky ; Voltage - DC Reverse (Vr) (Max): 120V ; Current - Average Rectified (Io): 12A ; Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A ; Reverse Recovery Time (trr): - ; Current
Category: Discrete Semiconductor Products
General Semiconductor
V12P12-M3/87A - -
V12P12-G3/86A 12 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A. Specifications: Rectifier Configuration / Technology: Schottky ; Package: GREEN, PLASTIC, SMPC, 3 PIN ; Number of Diodes: 1 ; VRRM: 120 volts ; IF: 12000 mA ; RoHS Compliant: RoHS
Category: Discrete - Diodes
Vishay Intertechnology
V12P12-G3/87A - -
V12P12-M3/86A - -
V12P12-M3/87A - -
V12P12HM3/86A - -
V12P12HM3/87A 12 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A. Specifications: Rectifier Configuration / Technology: Schottky ; Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN ; Number of Diodes: 1 ; VRRM: 120 volts ; IF: 12000 mA -

 

 
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