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Part number
DistributorStockDCManufactureDescription
 
10000  2008  -  -  
 
12500  2016  FAIRCHILD  -  
 
25000  2011  FAIRCHILD  TO-263(D2PAK)  
 
75000  -  FAIRC  TO-263(D2PAK)  
 
35000  2008-09  FAIRCHILD  -  
 
58201  12  FAIRCHILD  -  
 
9800  -  FSC  TO  
 
5000  -  -  -  
 
35000  2016  FAIRCHILD  TO-263  
 
5000  -  -  -  
 
45000  2013  FAIRCHILD  TO-263(D2PAK)  
 
21518  11-12  FAIRCHILD  TO-263(D2PAK)  
 
26000  05  FAIRC  TO-263(D2PAK)  
 
10000  2008  -  -  
 
25800  2016  FCS  TO-263  
 
27170  11/12/13  FAIRCHILD  TO-263(D2/TO-263  
 
10000  2008  -  -  
 
58201  12  -  -  
 
10000  2008  -  -  
 
12  call,60mins feedback  -  TO-263-3, DPak (2 Leads Tab), TO-263AB  
 
15000  N/A  FSC  -  
 
5000  13  Fairchild  -  
 
468000  -  FAIRCHILD  -  
 
27170  11/12/13  FAIRCHILD  TO-263(D2/TO-263  
 
58201  12  -  -  
 
58201  12  -  -  

 

Part information


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features

3.6A, 900V, RDS(on) 4.25 @ VGS 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Parameter

Part numberCircuit descriptionManufacture
FQB3N90 900V N-channel QFET
Category: Discrete - Transistors
Fairchild Semiconductor
FQB3N90TM Fet - Single Discrete Semiconductor Product 3.6A 900V 3.13W Surface Mount; MOSFET N-CH 900V 3.6A D2PAK. Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 900V ; Current - Continuous Drain (Id) @ 25 C: 3.6A ; Rds On (Max) @ Id, Vgs: 4.25
Category: Discrete Semiconductor Products
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