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Part number
DistributorStockDCManufactureDescription
 
6  0718  IXYS  TO-220  
 
58920  12  -  -  
 
11  -  -  -  
 
3000  -  -  -  
 
6  -  IXYS  TO-220  
 
200  12  FUJI  TO-263  
 
63  -  EUPEC  -  
 
5500  -  -  -  
 
2000  -  -  -  
 
21518  11-12  FUJI  TO-220F  
 
45000  2013  FUJI  TO-220F  
 
6500  17  FUJI  TO-220F  
 
41258  12  -  FUJIELEC.  
 
45000  2016  FUJI  TO-220F  
 
45000  2013  FUJI  T-pack(SJ)/TO-263  
 
781  07  FUJI  TO-263  
 
41258  12  -  -  
 
21518  11-12  FUJI  T-PACK(SJ)  
 
45000  2016  FUJI  T-PACK(SJ)  
 
781  07  FUJI  TO-263  
 
45000  2016  FUJI  T-pack(S)/TO-263  
 
21518  11-12  FUJI  T-PACK(S)  
 
41258  12  -  -  
 
45000  2013  FUJI  T-pack(S)/TO-263  
 
45000  2016  FUJI  T-PACK(L)  
 
38722  14  FUJI  T-PACK(L)  
 
21518  11-12  FUJI  T-PACK(L)  
 
45000  2013  FUJI  T-PACK(L)  
 
45000  2016  FUJI  TO-220AB  
 
21518  11-12  FUJI  TO-220AB  
 
50000  17  FUJ  TO-220  
 
45000  2013  FUJI  TO-220AB  

 

Part information

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp es w ithout the express w ritten cons ent of Fuji Electric Device Technolog C o. ,Ltd.

SPECIFICATION

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

Part numberCircuit descriptionManufacture
FMA80N10T2 80 A, 100 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0128 ohms ; PD: 2160 milliwatts ; Package Type: TO-220, TO-220F, 3 PIN ; Number of units in IC: 1
Category: Discrete - Transistors
Fuji Electric Corp. of America
FMB80N10T2 80 A, 100 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0128 ohms ; PD: 1670 milliwatts ; Package Type: SMD, TPACK-3 ; Number of units in IC: 1 -
FMC80N10T2 - -
FMI80N10T2 80 A, 100 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0128 ohms ; PD: 1670 milliwatts ; Package Type: TPACK-3 ; Number of units in IC: 1 -
FMP80N10T2 80 A, 100 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0128 ohms ; PD: 2020 milliwatts ; Package Type: TO-220, TO-220AB, 3 PIN ; Number of units in IC: 1 -

 

 
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