Details, datasheet, quote on part number: STM51004G
CategoryDiscrete => Transistors => Bipolar => Medium frequency
Description1300 NM Laser in Receptacle Package, Medium Power
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload STM51004G datasheet
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Features, Applications

Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power Hermetically sealed subcomponent, similar 18 SM Pigtail with optional flange

Connector/Flange FC / without flange DIN / without flange FC / with flange DIN / with flange

Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax 2 mm distance from bottom edge of case Laserdiode Direct forward current Radiant power CW Reverse voltage Symbol Values Unit

Maximum Ratings (cont'd) Parameter Monitor Diode Reverse voltage Symbol Values Unit

Characteristics All optical data refer to a coupled µm SM fiber, = 25 °C. Parameter Laser Diode Optical output power Emission wavelength center of range 0.5 mW Spectral bandwidth 0.5 mW (RMS) Threshold current + 85 °C) Forward voltage 0.5 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/Fall time Monitor Diode Dark current, = 0 Photo current, V µW mW/A ns Symbol Values Unit

Laser Diode Radiant Power in Singlemode Fiber
1.2 1 Relative Optical Power Optical Power in mW Forward Current in mA
Monitor Diode Dark Current IR = f(TA) port 5 V


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