Details, datasheet, quote on part number: BF257
PartBF257
CategoryDiscrete => Transistors
Description
CompanyMicro Electronics
DatasheetDownload BF257 datasheet
Quote
Find where to buy
 
  
Some Part number from the same manufacture Micro Electronics
BF258
BF259
BF297
BF298
BF299
BF314
BF391
BF392
BF393
BF397
BF398
BF420
BF421
BF422
BF423
BF491
BF492
BF493
BF494
BF494B
BF494C

2N5485 :

2SA1015GR :

BC179-6 :

BC558A :

MO1369A :

PN4250 :

MLM-350FCQ : Visible LED Full Color Series (3 Chips in 1 Package)

MMC4001 : NOR Gates Complementary MOS Integrated Circuits

BF595 : 30 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Specifications: Polarity: NPN ; Package Type: TO-92, TO-92E, 3 PIN

MY256A : 7 SEG NUMERIC DISPLAY, YELLOW, 14.22 mm Specifications: Display Type: Segmented ; Character Type: Numeric ; Common: Common Anode ; LED Color: Yellow ; Character Height: 14.22 mm (0.5598 inch)

Same catergory

BB535 : Silicon Variable Capacitance Diode. For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to Maximum Ratings = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current Operating temperature range Storage temperature IF Top Tstg mA C Symbol VR VRM Value 30 35 Unit V Electrical.

IRFIZ44N : 55V Single N-channel HexFET Power MOSFET in a TO-220 Fullpak (ISO) Package.

KTA1709 : = General Purpose Transistor ;; Package = TO-126. STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO PC Tj Tstg RATING UNIT CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current.

PTF10100 : RF Specific. 165 Watts, 860-900 MHZ Ldmos Field Effect Transistor. The is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output.

SDF12N100 : VDS (V) = ;; Id Continuous Tc=25C (A) = 12 ;; Idm Pulsed (A) = 48 ;; RDS (On) (Ohms) = 1 ;; PD Max = 300 ;; Page No. = A53 ;; Package Options = ;; Outline Number Section Z =.

SRA2211U : PNP Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Collector.

03028-BR221YKZCC : CAP,CERAMIC,220PF,16VDC,10% -TOL,10% +TOL,BR TC CODE,-15,15% TC,0603 CASE. s: Dielectric: Ceramic Composition.

03028-BR681BJZP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BR, 0.00068 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 6.80E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

05002-110BKZB : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000011 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.10E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

08053C471J4T2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.00047 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 4.70E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style:.

08M3902FF : RESISTOR, TEMPERATURE DEPENDENT, NTC, 39000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, LEAD FREE ; Resistance Range: 39000 ohms ; Tolerance: 1 +/- % ; Standards and Certifications: RoHS.

BYG21KHM3/TR : 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC. s: Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN ; Number of Diodes: 1 ; VRRM: 800 volts ; IF: 1500 mA ; trr: 0.1200 ns.

G2A/1 : 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AP. s: Package: HERMETIC SEALED, GLASS PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 2000 mA ; trr: 3.5 ns ; RoHS Compliant: RoHS.

MBRB1080-G : 10 A, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: D2PAK, LEAD FREE, D2PAK-3 ; Number of Diodes: 1 ; IF: 10000 mA ; RoHS Compliant: RoHS.

PC006M100KST : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 100000 uF, CHASSIS MOUNT. s: : Polarized ; Capacitance Range: 100000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 12600 microamps ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40 to 185 F).

SML80B16FR3 : 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 800 volts ; rDS(on): 0.5600 ohms ; Package Type: TO-247, TO-247AD, 3 PIN ; Number of units in IC: 1.

SMW268RJT : RESISTOR, WIRE WOUND, 2 W, 5 %, 200 ppm, 68 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 68 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power Rating: 2 watts (0.0027 HP) ; Operating.

 
0-C     D-L     M-R     S-Z