Details, datasheet, quote on part number: ZXMN6A09DN8TA
PartZXMN6A09DN8TA
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionDual 60v N-channel Enhancement Mode MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN6A09DN8TA datasheet
Cross ref.Similar parts: IRF7351, IRF7351, STS4DNF60L
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Features, Applications

DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
APPLICATIONS
- DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXMN6A09DN8TA ZXMN6A09DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm QUANTITY PER REEL 500 units 2500 units

PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current A =25°C)(a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation A =25°C (a)(d) Linear Derating Factor Power Dissipation A =25°C (a)(e) Linear Derating Factor Power Dissipation A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS GS ID LIMIT to +150 UNIT V A

PARAMETER Junction to Ambient (a)(d) Junction to Ambient (a)(e) Junction to Ambient (b)(d) SYMBOL R JA VALUE 69 58 UNIT °C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power.



 

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