Details, datasheet, quote on part number: ZXMN3B14F
PartZXMN3B14F
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN3B14F datasheet
Cross ref.Similar parts: MGSF1N03, BSS306N, BSC042N03MS G, RTR025N03TL, SSM3K324R
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Features, Applications
ADVANCED INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package
APPLICATIONS
DC-DC Converters Power Management functions Disconnect switches Motor control

DEVICE ZXMN3B14FTA ZXMN3B14FTC REEL SIZE 7" 13" TAPE WIDTH 8mm QUANTITY PER REEL 3000 units 10000 units

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A =25°C (b) A =70°C (b) A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation A =25°C (a) Linear Derating Factor Power Dissipation A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range stg

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured t 5 sec. (c) Repetitive rating 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS = 3.1A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge rr 0.85 tbd S = (tbd)A, F = (tbd)A, s t d(on) tr t d(off) 3.1A C iss C oss C rss =0V f=1MHz

NOTES (1) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.


 

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