Details, datasheet, quote on part number: ZXMN3A01F
PartZXMN3A01F
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN3A01F datasheet
Cross ref.Similar parts: PMV117EN, BSH108215, FDN361N, BSH108, SSM3K336R, FDN361AN, GF2304, NDS351AN, Si2302DS
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Features, Applications

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package
APPLICATIONS
- DC Converters Power Management Functions Motor control

DEVICE ZXMN3A01FTA ZXMN3A01FTC REEL SIZE 7" 13" TAPE WIDTH 8mm QUANTITY PER REEL 3000 units 10000 units

PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current A =25C (b) A =70C (b) A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation A =25C (a) Linear Derating Factor Power Dissipation A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS GS ID LIMIT to +150 UNIT V A

PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA VALUE 200 155 UNIT C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating 25mm FR4 PCB, = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.



 

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