Details, datasheet, quote on part number: ZXMN2AM832
PartZXMN2AM832
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionDual N-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN2AM832 datasheet
Cross ref.Similar parts: ZXMN2AMC
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Features, Applications
MPPSTM Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Packaged in the new innovative x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count

FEATURES
Low On - Resistance Fast switching speed Low threshold Low gate drive x 2mm MLP
APPLICATIONS
DC-DC Converters Power Management Functions Disconnection switches Motor Control

DEVICE ZXMN2AM832TA ZXMN2AM832TC REEL 7'` 13'` TAPE WIDTH 8mm QUANTITY PER REEL 3000 units 10000 units

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current =25 C (b) (f) =70 C (b) (f) =25 C Pulsed Drain Current Continuous Source Current (Body Diode) (b) (f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25C (a) (f) Linear Derating Factor Power Dissipation at TA=25C (b) (f) Linear Derating Factor Power Dissipation at TA=25C (c) (f) Linear Derating Factor Power Dissipation ( d) (f) Linear Derating Factor Power Dissipation at TA=25C (d) (g) Linear Derating Factor Power Dissipation at TA=25C (e) (g) Linear Derating Factor Operating and Storage Temperature Range

UNIT mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C

PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)

Notes (a) For a dual device surface mounted sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.


 

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