Details, datasheet, quote on part number: ZXMN2A04DN8TC
PartZXMN2A04DN8TC
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionDual 20v N-channel Enhancement Mode MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN2A04DN8TC datasheet
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Features, Applications

DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
APPLICATIONS
- DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXMN2A04DN8TA ZXMN2A04DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm QUANTITY PER REEL 500 units 2500 units

PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL D SS VGS LIMIT to +150 UNIT V A

Continuous Drain Current A =25C)(a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation A =25C (a)(d) Linear Derating Factor Power Dissipation A =25C (a)(e) Linear Derating Factor Power Dissipation A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range j :T stg

PARAMETER Junction to Ambient (a)(d) Junction to Ambient (a)(e) Junction to Ambient (b)(d) SYMBOL R JA VALUE 70 60 UNIT C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. Refer to Transcient Thermal Inpedance graph. (d) For device with one active die (e) For device with two active die running at equal power.

PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge Q rr TBA? F =6A, di/dt= tr t d(off) tf Qg Qgs Qgd ss C rss f=1MHz V (BR)D SS V GS(th) R DS(on) V DS

NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.


 

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