Details, datasheet, quote on part number: ZXMN2A01E6TA
PartZXMN2A01E6TA
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description20v N-channel Enhancement Mode MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN2A01E6TA datasheet
Quote
Find where to buy
 
  

 

Features, Applications

DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package
APPLICATIONS
- DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXMN2A01E6TA ZXMN2A01E6TC REEL SIZE 7" 13" TAPE WIDTH 8mm QUANTITY PER REEL 3000 units 10000 units

PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current A =25C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation A =25C (a) Linear Derating Factor Power Dissipation A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS GS ID LIMIT to +150 UNIT V A

PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA VALUE 113 73 UNIT C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature.

PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge F =4A, di/dt= s t d(on) tr t d(off) =5V C iss C oss C rss f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) V GS

NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.


 

Some Part number from the same manufacture Zetex Inc.
ZXMN2A01E6TC 20v N-channel Enhancement Mode MOSFET
ZXMN2A01F N-channel MOSFET
ZXMN2A01FTA 20v N-channel Enhancement Mode MOSFET
ZXMN2A01FTC
ZXMN2A02N8 N-channel MOSFET
ZXMN2A02X8
ZXMN2A02X8TA 20v N-channel Enhancement Mode MOSFET
ZXMN2A02X8TC
ZXMN2A03E6 N-channel MOSFET
ZXMN2A03E6TA 20v N-channel Enhancement Mode MOSFET
ZXMN2A03E6TC
ZXMN2A04DN8 Dual N-channel MOSFET
ZXMN2A04DN8TA Dual 20v N-channel Enhancement Mode MOSFET
ZXMN2A04DN8TC
ZXMN2A14F N-channel MOSFET
ZXMN2AM832 Dual N-channel MOSFET
ZXMN3A01E6 N-channel MOSFET
ZXMN3A01E6TA 30v N-channel Enhancement Mode MOSFET
ZXMN3A01E6TC
ZXMN3A01F N-channel MOSFET
ZXMN3A01FTA 30v N-channel Enhancement Mode MOSFET

BAS70DW-04-13 : 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE Specifications: Diode Type: General Purpose ; IF: 70 mA ; Package: ULTRA SMALL, PLASTIC PACKAGE-6 ; Pin Count: 6 ; Number of Diodes: 4

BZX84C15BSC : 15 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE

MMBD914/E8 : 0.2 A, 75 V, SILICON, SIGNAL DIODE Specifications: Package: PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; IF: 200 mA

MMSZ5239AS : 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE

MMSZ5258B-T1 : 33 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE

SA8.0A-GT3 : 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 Specifications: Configuration: Single ; Direction: Unidirectional ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 8.89 to 9.83 volts

ZLLS350-7 : 0.65 A, SILICON, SIGNAL DIODE Specifications: Package: GREEN, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 650 mA ; RoHS Compliant: RoHS

1.5KE22AE3/71 : 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201 Specifications: Configuration: Single ; Direction: Unidirectional ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 20.9 to 23.1 volts ; RoHS Compliant: RoHS

Same catergory

2SC4117 : NPN Epitaxial Type ( Audio Frequency General Purpose Amplifier Applications ).

50SQ : . IF(AV) Rectangular waveform VRRM range IFSM 5 s sine @ 5 Apk, = 125C range C The 50SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation to 175C junction temperature. Typical applications are in switching power supplies, converters,.

CLL2003 : High Voltage Switching Diode. : The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: CATHODE BAND MAXIMUM RATINGS: (TA=25C) SYMBOL Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak.

DSF11060SG : 400a 6000v Disc Fast Recovery Diode. APPLICATIONS s Double Side Cooling s High Surge Capability s Low Recovery Charge Type Number Repetitive Peak Reverse Voltage VRRM V Conditions Outline type code: M779b. See Package Details for further information. Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load,.

F1B2CA : Stack Silicon Diffused Diode ( High Speed Rectifier ).

IRKD600Series : Modules/Assembly Diodes. Standard Diodes Super Magn-a-pak TM Power Modules 800v to 1200v, 600a.

MLL5221 : Leadless Glass Zener Diodes.

NTE156 : General Purpose Silicon Rectifier.. : D Low Leakage D Low Forward Voltage Drop D High Current Capability Maximum Ratings: (TA = +25C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%) Peak Repetitive Reverse Voltage, VRRM. 1000V DC Blocking Voltage, VR. 1000V RMS Reverse Voltage, VR(RMS). 700V Average Rectified.

PMMAD1108 : Steering Diodes Arrays. Repetitive Peak Reverse Voltage = 50 ;; Forward Peak Pulse Current = 40 ;; Leakage Current A = 0.1 ;; Capacitance PF = 5 ;; Package = 12/1/01.

A03T-2 : 1 ELEMENT, 0.008 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Air ; Lead Style: Gull ; Application: General Purpose, RF Choke ; Inductance Range: 0.0080 microH ; Inductance Tolerance: 2 (+/- %) ; DCR: 0.0026 ohms ; Rated DC Current: 4000 milliamps ; Q Factor:.

BCY78C.MOD : 200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA. s: Polarity: PNP ; Package Type: HERMETIC SEALED, METAL, TO-18, 3 PIN.

NSD92-100 : 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-5. s: Package: DO-5, DO-5, 1 PIN ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 35000 mA ; trr: 0.0700 ns.

SIHFL9110-GE3 : 1100 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 1.2 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 ; Number of units in IC: 1.

2673200201 : 1 FUNCTIONS, FERRITE BEAD. s: Devices in Package: 1 ; Standards and Certifications: RoHS.

6181 : RESISTOR, POTENTIOMETER, CONDUCTIVE PLASTIC, 1 TURN(S), 1 W, 1000 ohm - 100000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: Panel Mount (Bushing) ; Operating Temperature: -40 to 70 C (-40 to 158 F).

85HFLR100S05M : 85 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AB. s: Number of Diodes: 1 ; VRRM: 1000 volts ; IF: 85000 mA ; trr: 0.5000 ns.

932C2W10K-F : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 250 V, 10 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 10 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 250 volts ; Mounting Style:.

 
0-C     D-L     M-R     S-Z