Details, datasheet, quote on part number: ZXMN10A08E6TC
PartZXMN10A08E6TC
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description100v N-channel Enhancement Mode MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMN10A08E6TC datasheet
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Features, Applications

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package
APPLICATIONS
- DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXMN10A08E6TA ZXMN10A08E6TC REEL SIZE 7" 13" TAPE WIDTH 8mm QUANTITY PER REEL 3000 units 10000 units

PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current A =25°C (b) A =70°C (b) A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation A =25°C (a) Linear Derating Factor Power Dissipation A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS GS ID LIMIT to +150 UNIT V A

PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA VALUE 113 73 UNIT °C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm FR4 PCB, = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph


 

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