Details, datasheet, quote on part number: ZXMD63P03XTC
PartZXMD63P03XTC
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N/P-Channel Combo
DescriptionDual 30v P-channel Enhancement Mode MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMD63P03XTC datasheet
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Features, Applications

DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package

APPLICATIONS - DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXMD63P03XTA ZXMD63P03XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units

PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current T A=70°C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation T A=25°C (a)(d) Linear Derating Factor Power Dissipation T A=25°C (a)(e) Linear Derating Factor Power Dissipation T A=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS PD T j:T stg LIMIT to +150 UNIT mW/°C W mW/°C W mW/°C °C

PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(d) Junction to Ambient (a)(e) SYMBOL R JA VALUE 100 120 UNIT °C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power.



 

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