Details, datasheet, quote on part number: ZXMC3A16DN8
PartZXMC3A16DN8
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
DescriptionN & P-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXMC3A16DN8 datasheet
Cross ref.Similar parts: NDS9952A, STS7C4F30L
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Features, Applications

SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) 0.048 ; ID= -5.4A DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
APPLICATIONS

DEVICE ZXMC3A16DN8TA ZXMC3A16DN8TC REEL 7'` 13'` TAPE WIDTH 12mm QUANTITY PER REEL 500 units 2500 units

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =25 C (b)(d) =70 C (b)(d) =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25C (a)(d) Linear Derating Factor Power Dissipation at TA=25C (a)(e) Linear Derating Factor Power Dissipation at TA=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS GS ID N-Channel P-Channel to UNIT mW/C W mW/C W mW/C C

PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(e) Junction to Ambient (b)(d)

Notes (a) For a dual device surface mounted 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured t 10 sec. (c) Repetitive rating 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power.


 

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