Details, datasheet, quote on part number: ZXM64N035GTC
PartZXM64N035GTC
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXM64N035GTC datasheet
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Features, Applications

DESCRIPTION

This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package
APPLICATIONS
50W Class D Audio Output Stage Motor Control

DEVICE ZXM64N035GTA ZXM64N035GTC REEL SIZE 7" 13" TAPE WIDTH 12mm QUANTITY PER REEL 1000 units 4000 units

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A =25C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation A =25C (a) Linear Derating Factor Power Dissipation A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS GS ID LIMIT to +150 UNIT V A

PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA VALUE 62.5 32 UNIT C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.

PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) D =1.9A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge 19.1 t d(on) tr t d(off) gd C iss C oss C rss g fs

NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature.


 

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