Details, datasheet, quote on part number: TZS4711
PartTZS4711
Category
DescriptionSilicon Epitaxial Planar Z-diodes
CompanyVishay Intertechnology
DatasheetDownload TZS4711 datasheet
Cross ref.Similar parts: BZV55-B27, BZV55-C27
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Features, Applications

Features
Zener voltage specified 50 mA Maximum delta VZ given from 100 mA Very high stability Low noise
Applications
Type TZS4678 Ordering Code TZS4678­GS08 Remarks Tape and Reel

= 25_C Parameter Power dissipation Z­current Junction temperature Storage temperature range Test Conditions RthJA 300K/W

= 25_C Parameter Junction ambient Test Conditions on PC board mmx1.6 mm Symbol RthJA Value 500 Unit K/W

= 25_C Parameter Forward voltage Test Conditions IF=100mA Type Symbol VF Min Typ Max 1.5 Unit V

1.) Toleranzing and voltage designation (VZ). The type numbers shown have a standard tolerance 5% on the nominal zener voltage. 2.) Maximum zener current ratings (IZM). Maximum zener current ratings are based on maximum zener voltage of the individual units. 3.) Reverse leakage current (IR). Reverse leakage currents are guaranteed and measured VR as shown on the table. 4.) Maximum voltage change (DVZ). Voltage change is equal to the difference between at 100mA and at 10mA.

Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Typical Change of Working Voltage vs. Junction Temperature
Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C

 

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TZS4712 Silicon Epitaxial Planar Z-diodes
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