Details, datasheet, quote on part number: TZQ5226B
PartTZQ5226B
Category
DescriptionSilicon Epitaxial Planar Z-diodes
CompanyVishay Intertechnology
DatasheetDownload TZQ5226B datasheet
Cross ref.Similar parts: BZV55-B3V3
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Features, Applications

Features

Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise

Applications

Type TZQ5221B Ordering Code TZQ5221BGS08 TZQ5221BGS18 Remarks Tape and Reel (2.500 pcs) Tape and Reel (10.000 pcs)

= 25_C Parameter Power dissipation Zcurrent Junction temperature Storage temperature range Test Conditions RthJA 300K/W

= 25_C Parameter Junction ambient Test Conditions on PC board mmx1.6 mm Symbol RthJA Value 500 Unit K/W

= 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
on dc measurement at thermal equilibrium; case temperature maintained 2C.
Vishay Semiconductors Characteristics (Tj = 25_C unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C
1.3 VZtn Relative Voltage Change IF Forward Current ) 1.2
Figure 3. Typical Change of Working Voltage vs. Junction Temperature

 

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TZQ5227B Silicon Epitaxial Planar Z-diodes
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