|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel|
|Description||Enhancement Mode MOSFET (includes Low Threshold MOSFET)|
|Datasheet||Download 2N7008 datasheet
|BVDSS / BVDGS 60V RDS(ON) (max) 7.5 ID(ON) (min) 500mA Order Number / Package TO-92 2N7008
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance 1.6 mm from case for 10 seconds. BVDSS BVDGS +150°C 300°C
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Min ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance 500 7.5 Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop V pF VGS = 0V, VDS = 1 MHz VDD ID =200 mA, RGEN = 25 ISD = 150mA, VGS 0V m Typ Max Unit µA mA Conditions = -10µA, VGS = 0V VGS = VDS, = 250µA VGS = ±30V, VDS = 0V VGS = 0V, VDS = 50V VGS = 0V, VDS = 125°C VGS = 10V, VDS 2VDS(ON) VGS = 50mA VGS = 500mA
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 FAX: (408) 222-4895 www.supertex.com
|Some Part number from the same manufacture Supertex, Inc.|
|AN0116 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode|
|AP01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode|
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