Details, datasheet, quote on part number: 2N7007
Part2N7007
Category
Description
CompanySupertex, Inc.
DatasheetDownload 2N7007 datasheet
Cross ref.Similar parts: TN5325N3
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Features, Applications
BVDSS / BVDGS 240V RDS(ON) (max) 45 ID(ON) (min) 150mA Order Number / Package TO-92 2N7007
Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Applications

Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance 1.6 mm from case for 10 seconds.

Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Min ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD ON-State Drain Current 50 150 Static Drain-to-Source ON-State Resistance 45 Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop ns pF VGS = 0V, VDS = 1 MHz VDD = 50 mA, RGEN = 25 ISD = 65mA, VGS m mA Typ Max Unit nA A Conditions = 100A, VGS = 0V VGS = VDS, = 250A VGS = 20V, VDS = 0V VGS = 0V, VDS = 120V VGS = 0V, VDS = 125C VGS = 4.5V, VDS = 20V VGS = 10V, VDS = 20V VGS = 20mA VGS = 50mA VDS = 50mA

Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.


 

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