Details, datasheet, quote on part number: STM2DPFS30L
PartSTM2DPFS30L
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
DescriptionP - Channel 30v - 0.145ohm - 2a Minis0-8 StripFET MOSFET Plus Schottky Rectifier
CompanyST Microelectronics, Inc.
DatasheetDownload STM2DPFS30L datasheet
  

 

Features, Applications

P - CHANNEL 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30V SCHOTTKY 1A R DS(on <0.165 V RRM 2A V F(M AX) 0.55V

This product associates the latest low voltage St ripFET TM in p-channel version to a low drop Schottk y diode. Such configuration is extremely versatile in implementing a large variety of DC-DC convert ers for printers, portable equipment, and cellular phones. New MiniSO-8 package features:

Half footprint area versus standard SO-8, for application where minimum circuit board space is necessary. Extremely low profile, ideal for low thickness equipment.

Symbol VDS V DGR GS ID IDM( t ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS k ) Gate-source Voltage Drain Current (continuous) 25 C Drain Current (continuous) 100 oC Drain Current (pulsed) Total Dissipation 25 C

Symb ol V RRM I F(RMS) I F (AV) I FSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average F orward Current Surge Non Repetitive Forward Current Critical Rate Of Rise Of Reverse Voltage C =0.5 tp= 10 ms Sinusoidal

Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

R thj -amb tg Tj Thermal Resistance Junction-ambient MOSFET Storage Temperature Range Maximum Junction Temperature

MOSFET ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified) OFF

Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions = 0 Min. Typ. Max. Unit A nA

Zero Gate Voltage DS = Max Rating Drain Current DS = Max Rating Gate-body Leakage 20 V Current (VDS = 0)

Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V GS Static Drain-source = 10V Resistance 4.5V On State Drain Current Test Con ditions A ID Min. 1 Typ. 0.145 0.18 Max. 0.165 0.2 Unit V A

Symbo iss s C rss Parameter Forward Transconductance Test Con ditions DS > ID(o x R DS(on )ma MHz = 0 Min. Typ. Max. Unit S pF

Input Capacitance 25 V Output Capacitance Reverse T ransfer Capacitance

Symbo l t d(on) Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions 4.5 V (Resistive Load, see fig. 5 V Min. Typ. Max. 19 48 Unit ns nC

Symbo l t d(of f) tf Parameter Turn-off Delay T ime Fall T ime Test Con ditions 4.5 4.7 (Resistive Load, see fig. 1) Min. Typ. 88 23 Max. Unit ns

Symbo l ISD I SDM rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Time Reverse Charge Reverse Current = 0 di/dt o C tbd Recovery = 15V Recovery Test Con ditions Min. Typ. Max. 8 1.2 Unit ns nC

Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Pulse width limited by safe operating area

 

Some Part number from the same manufacture ST Microelectronics, Inc.
STM351-2 RF Power Module Wireless Local Loop Applications
STM376-2
STM6316 DVD Optical Disc - Integrated Solution For DVD Players
STM690 3V Supervisor With Battery Switchover
STM690A 5V Supervisor With Battery Switchover
STM690RM6E 3V Supervisor With Battery Switchover
STM705 5V Supervisor
STM706 3V Supervisor
STM707 5V Supervisor
STM708 3V Supervisor
STM795 3V Supervisor With Battery Switchover
STM7E1 7 e 1 Channels Switch Array
STM7E1A
STm8000 Dvd-recorder Market With System-on-chip Solution
STM802 Solenoid Controller ic
STM804 3V Supervisor With Battery Switchover
STM809 Reset Circuit
STM809LWX6F
STM809M
STM809MWX6F
STM809R

M295V100-T70XN3TR : 1 Mbit 128kb x8 or 64kb X16, Boot Block Single Supply Flash Memory

PSD4235F3V-C-20J : Flash In-system-programmable Peripherals For 16-bit MCUs

PSD4235F3V-C-70M : Flash In-system-programmable Peripherals For 16-bit MCUs

PSD854320JIT : Flash In-system Programmable Isp Peripherals For 8-bit MCUs

M27V322-150B1 : 32 Mbit (2Mb 16) Low-voltage UV Eprom and OTP Eprom

UPSD3254B-40T1 : Flash Programmable System Devices with 8032 Microcontroller Core and 256kbit SRAM

PSD834F2VA-20UIT : 256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 Specifications: Device Type: PIA-GENERAL PURPOSE ; Supply Voltage: 3.3V ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Package Type: PLASTIC, LCC-52 ; Pins: 52

RHFL4913SCA2 : 2.5 V FIXED POSITIVE REGULATOR, CSFM3 Specifications: Regulator Type: Standard ; Output Polarity: Positive ; Output Voltage Type: Fixed ; Package Type: Other, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-257, 3 PIN ; Life Cycle Stage: ACTIVE ; Output Voltage: 2.45 to 2.55 volts ; VIN: 5 to 12 volts

ST72P561AR7TC/XXXRS : 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; ROM Type: MROM ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 48 ; Package Type: LFQP, Other, 10 X 10 MM, LQFP-64 ; Operating Range: Commercial ; Pin Count: 64 ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Features: PWM

X0205BN : 1 A, 200 V, SCR Specifications: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 1 amps ; IGT: 0.0500 mA ; Standards and Certifications: RoHS ; Pin Count: 4

Same catergory

2N3053SMD05 : Screening Options Available = ;; Polarity = NPN ;; Package = SMD0.5 (TO276AA) ;; Vceo = 40V ;; IC(cont) = 0.7A ;; HFE(min) = 50 ;; HFE(max) = 120 ;; @ Vce/ic = 10V / 150mA ;; FT = 100MHz ;; PD = 0.8W.

2SC3912 : NPN Epitaxial Planar Silicon Transistor, Switching Application. Application Switching circuits, inverters circuits, inferface circuits, driver circuits. On-chip bias resistance R1=10k, R2=10k. Small-sized package : CP. Large current capacity : IC=500mA. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction.

2SC4116 : Amplifier. NPN Epitaxial Type ( Audio Frequency General Purpose Amplifier Applications ).

2SC5845 : VCEO(V) = 50 ;; IC(A) = 0.1 ;; HFE(min) = 160 ;; HFE(max) = 460 ;; Package = Mini3-G1.

KBL402G : Glass Passivated. Pakage = KBL ;; Max. Reverse Voltage VRM (V)= 100 ;; Max. Aver. Rect. Current io (A)= 4 ;; Ifsm (A)= 150.

MMN7011 : . The MicroMetrics MMN 7000 series NIP diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. This, combined with a grown junction N++ layer, yields a very abrupt structured I region with minimum outdoping and low voltage punchthrough characteristics. Our high temperature passivation.

NTHD4401PT1 : ChipFET Pchannel Dual 20V, Package: ChipFET, Pins=8. Low RDS(on) and Fast Switching Speed in a ChipFET Package Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where Heat Lead (Pb) Free Version Available Applications Charge Control in Battery Chargers Optimized for Battery and Load Management Applications in MP3 Players, Cell Phones, Digital.

SKM75GB124D : Semitrans(r)m Low Loss Igbt Modules. VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = IC IFM = ICM IFSM I 2t RGE 20 k Tcase 25/75 C Tcase = 25/75 C; 1 ms per IGBT, Tcase 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase 25/80 C Tcase = 25/80 C; = 10 ms; sin.; = 10 ms; 150 C V(BR)CES VGE 4 mA VGE(th) VGE = VCE, 2 mA ICES 25 C VGE = 0 VCE = VCES 125 C IGES VGE 20 V, VCE = 0 VCEsat.

U06C05 : Ultra fast rectifier diodes. Ultra Fast Rectifier Diodes.

03028BX331BJU : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 3.30E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

08053G333ZAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.033 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0330 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.

BFT32AR1 : 5000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

D5006UKG4 : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 125 volts ; Package Type: ROHS COMPLIANT, CERAMIC, DV, 6 PIN ; Number of units in IC: 1.

GRJ32QR72E154KWJ1L : CAPACITOR, CERAMIC, MULTILAYER, 250 V, X7R, 0.15 uF, SURFACE MOUNT, 1210. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.1500 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 250 volts ; Mounting Style: Surface Mount Technology.

MBRB760-G : 7.5 A, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: D2PAK, GREEN, PLASTIC, D2PAK-3 ; Number of Diodes: 1 ; IF: 7500 mA ; RoHS Compliant: RoHS.

2727R-01J : 1 ELEMENT, 10 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Iron ; Lead Style: Radial, WIRE ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 10 microH ; Rated DC Current: 420 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

2N4939G4 : 50 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: TO-79, 8 PIN.

2SC5868TL : 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: TSMT3, 3 PIN.

50422 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

820NS-10D : RESISTOR, VOLTAGE DEPENDENT, 665 V, 80 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Power Rating: 0.4000 watts (5.36E-4 HP) ; Operating DC Voltage: 665 volts.

 
0-C     D-L     M-R     S-Z