Details, datasheet, quote on part number: L6202-L6203
PartL6202-L6203
CategoryDiscrete => Bridges
DescriptionDmos Full Bridge Driver
CompanyST Microelectronics, Inc.
DatasheetDownload L6202-L6203 datasheet
  

 

Features, Applications

SUPPLY VOLTAGE 48V 5A MAX PEAK CURRENT (2A max. for L6201) TOTAL RMS CURRENT 1.5A; L6203/L6201PS:4A RDS (ON) 0.3 (typical value at 25 C) CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVE OPERATING FREQUENCY TO 100 KHz THERMAL SHUTDOWN INTERNAL LOGIC SUPPLY HIGH EFFICIENCY DESCRIPTION The I.C. is a full bridge driver for motor control applications realized in Multipower-BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip. By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance. The DMOS output transistors can operate at supply voltages to 42V and efficiently at high switchBLOCK DIAGRAM MULTIPOWER BCD TECHNOLOGY

ing speeds. All the logic inputs are TTL, CMOS and C compatible. Each channel (half-bridge) of the device is controlled by a separate logic input, while a common enable controls both channels. The I.C. is mounted in three different packages.

This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Device 10 11 Name SENSE ENAB LE N.C. GND N.C. BOOT1 IN1 GND IN2 BOOT2 Vref Function A resistor Rsen se connected to this pin provides feedback for motor current control. When a logic high is present on this pin the DMOS POWER transistors are enabled to be selectively driven by IN1 and IN2. Not Connected Common Ground Terminal Common Ground Terminal Common Ground Terminal Not Connected Ouput of 2nd Half Bridge Supply Voltage Output of first Half Bridge A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. Digital Input from the Motor Controller Common Ground Terminal Common Ground Terminal Common Ground Terminal Digital Input from the Motor Controller A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. Internal voltage reference. A capacitor from this pin to GND is recommended. The internal Ref. Voltage can source out a current of 2mA max.

Symbol Vs VOD VIN, VEN Io Power Supply Differential Output Voltage (between Out1 and Out2) Input or Enable Voltage Pulsed Output Current for L6201PS/L6202/L6203 (Note 1) Non Repetitive 1 ms) for L6201 for L6201PS/L6202/L6203 DC Output Current for L6201 (Note 1) Sensing Voltage Boostrap Peak Voltage Total Power Dissipation: Tpins = 90C for L6201 for L6202 Tcase = 90C for L6201PS/L6203 Tamb = 70C for L6201 (Note 2) for L6202 (Note 2) for L6201PS/L6203 (Note 2) Storage and Junction Temperature Parameter Value + 150 Unit C

Note 1: Pulse width limited only by junction temperature and transient thermal impedance (see thermal characteristics) Note 2: Mounted on board with minimized dissipating copper area.


 

Related products with the same datasheet
L6203
Some Part number from the same manufacture ST Microelectronics, Inc.
L6203 Dmos Full Bridge Driver
L6203
L6203/L
L6204 Dmos Dual Full Bridge Driver
L6204D013TR
L6205
L6205D013TR
L6205N
L6205PD013TR
L6206
L6206D013TR
L6206N
L6206PD013TR
L6207 Dmos Dual Full Bridge Driver With PWM Current Controller
L6207D013TR
L6207N
L6207PD013TR
L6208 Dmos Driver For Bipolar Stepper Motor
L6208D013TR
L6208N
L6208PD013TR

PSD4135F1V-B-90UI : Flash In-system-programmable Peripherals For 16-bit MCUs

PSD4135G2-A-15UI : Flash In-system-programmable Peripherals For 16-bit MCUs

PSD835F3-C-20U : Configurable Memory System on a Chip For 8-bit Microcontrollers

STTH12003TV : 300V Ultra-Fast Diodes High Frequency Secondary Rectifier

M93C86-WMN3TP : 16kbit, 8kbit, 4kbit, 2kbit and 1kbit (8-bit or 16-bit Wide) Microwire Serial Access Eeprom

PSD813F2A-15J : Flash In-system Programmable ISP Peripherals For 8-bit MCUs

BYT30PI : FAST Recovery Rectifier Diode

M68AW256ML55ND1F : 4 Mbit (256k x16) 3.0V Asynchronous SRAM

TSV992IYST : Linear - Amplifier - Instrumentation, Op Amps, Buffer Amp Integrated Circuit (ics) General Purpose Cut Tape (CT) 820A 2.5 V ~ 5.5 V; IC OPAMP GP R-R 20MHZ 8SOIC Specifications: Packaging: Cut Tape (CT) ; Amplifier Type: General Purpose ; Number of Circuits: 2 ; Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Slew Rate: 10 V/s ; Gain Bandwidth Product: 20MHz ; Current - Supply: 820A ; Current - Output / Channel: 35mA ; Voltage - Supply, Single/Dual (): 2.

Same catergory

1N6638CSM : Screening Options Available = ;; Package = LCC1 ;; Type = Switching Diode ;; Voltage (V) = 125V ;; Current (A) = 300mA ;; VF(cont) = - ;; Trr(typ) = -.

ARF463A : N-channel Enhancement Mode. The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. Specified 125 Volt, 81.36 MHz Characteristics: Output Power = 100 Watts.

BDX34 : PNP Epitaxial Silicon Transistor. High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34C VCEO Collector-Emitter Voltage : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature.

MGFK36V4045 : 14.0-14.5GHz Band 4W Internally Matched GAAS Fet.

SBR2530 : Schottky Rectifier.

SDF230 : VDS (V) = ;; Id Continuous Tc=25C (A) = 9 ;; Idm Pulsed (A) = 36 ;; RDS (On) (Ohms) = 0.415 ;; PD Max = 75 ;; Page No. = A10 ;; Package Options = Jda, Jaa, Jab ;; Outline Number Section Z = 3, 6, & 7.

APT47M60J : N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss \"Miller\" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon.

CPMF-1200-S080B : 46 A, 1200 V, 0.11 ohm, N-CHANNEL, SiC, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1200 volts ; rDS(on): 0.1100 ohms ; Package Type: 4.08 X 4.08 MM, ROHS COMPLIANT, DIE-3 ; Number of units in IC: 1.

G43AT1B101 : RESISTOR, TRIMMER, 1 TURN(S), 0.25 W, 100 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 20 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.

IHLP4040DZEB6R8M11 : 1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, High Current ; Inductance Range: 6.8 microH ; Rated DC Current: 9000 milliamps ; Operating Temperature:.

VR371%R56M2 : RES,AXIAL,METAL GLAZE,6.2M OHMS,3.5KWV,1% +/-TOL,-200,200PPM TC. s: Category / Application: General Use.

232-15R0-JB : RES,AXIAL,WIREWOUND,15 OHMS,60WV,5% +/-TOL,-20,20PPM TC. s: Category / Application: General Use ; Technology / Construction: Wirewound.

2SA1480-C : 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP ; Package Type: TO-126ML, 3 PIN.

 
0-C     D-L     M-R     S-Z