Details, datasheet, quote on part number: L601
PartL601
CategoryDiscrete => Transistors => Bipolar => Bipolar Array => High Current
TitleHigh Current
DescriptionDarlington Arrays
CompanyST Microelectronics, Inc.
DatasheetDownload L601 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

EIGHT DARLINGTONS PER PACKAGE OUTPUT CURRENT 400 mA PER DRIVER (500 mA PEAK) OUTPUT VOLTAGE 90 V (VCE (sus)) 70 V) INTEGRAL SUPPRESSION DIODES FOR INDUCTIVE LOADS OUTPUTS CAN BE PARALLELED FOR HIGHER CURRENT TTL / CMOS / PMOS / DTL COMPATIBLE INPUTS PINNED OPPOSITE OUTPUTS TO SIMPLIFY LAYOUT

The four versions interface to all common logic families: DESCRIPTION The L602, L603 and L604 are high voltage, high current darlington arrays each containing eight open collector darlington pairs with common emitters. Each channel is rated 400 mA and can with stand peak currents of 500 mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.

These versatile devices are useful for driving a wide range of loads, including solenoids, relays DC motors, LED displays, filament lamps, thermal printheads and high power buffers.

Symbol VCEX Vi Ii Ptot Top Parameter Collector Emitter Voltage (input open) Collector Current Collector Peak Current Input Voltage (for L602 L603 and L604) Input Current (for L601 only) Total Power Dissipation a Tamb = 25C Operating Junction Temperature Value W C Unit V A

Symbol Rth-j-amb Parameter Thermal resistance Junction-ambient Max Value 70 Unit C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

Symbol ICEX VCE (sat) Parameter Output Leakage Current Collector Emitter Saturation Voltage Test conditions VCE 100 mA VCE 3 V VCE = 3V for L602 for L603 for L604 VCE 90 V for L601 for L602 for L603 for V 1000 Min. Typ. Max. Unit A

DC Forward Current Gain (L601 only) Minimum Input Voltage (ON condition)
Clamp Diode Reverse Current Clamp Diode Forward Voltage Turn-on Delay Turn-off Delay

 

Related products with the same datasheet
L602
Some Part number from the same manufacture ST Microelectronics, Inc.
L601-L603 Darlington Arrays
L601C
L602
L602-L604
L602C
L603
L603
L603C
L604
L604
L604C
L6114 Quad 100V, Dmos Switch
L6122 100V Dmos Switches
L6180 Octal Line Receiver
L6180A
L6180ADIP28
L6180D
L6180DPLCC28
L6181
L6181A
L6181ADIP28

LDO518 : ip Library: Low Noise, High PSRR 100ma Low Dropout Voltage Regulator

M34C00 : Application Specific Standard 3 X 128 Bit Serial I²C Bus EePROM For Ee-tags

PSD4256G6V-10UI : Flash In-system Programmable (ISP) Peripherals For 16-Bit MCUs

M2408RDS3TG/S : 16kbit, 8kbit, 4kbit, 2kbit and 1kbit Serial I2C Bus Eeprom

M27C4001-80F1 : 4 Mbit (256kb x16) UV Eprom and OTP Eprom

PSD854F5A-15UI : Flash In-system Programmable ISP Peripherals For 8-bit MCUs

TS512IYDT : Precision dual Operational Amplifier

ACS1086SA : AC Switch Family Transient Voltage Protected AC Switch (acstm)

STRH100N10 : Power MOSFETs For Aerospace N-channel 100 V, 0.030 ?, TO-254AA rad-hard low gate charge STripFET\" Power MOSFET

ST72P361AR7TC/XXXRS : 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; ROM Type: Flash ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 48 ; Package Type: TQFP, Other, 10 X 10 MM, ROHS COMPLIANT, PLASTIC, TQFP-64 ; Operating Range: Industrial ; Pin Count: 64 ; Operating Temperature: -40 to 85 C (-40 to 185

ST72P361AR9TA/XXXR : 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; ROM Type: Flash ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 48 ; Package Type: TQFP, Other, 10 X 10 MM, ROHS COMPLIANT, PLASTIC, TQFP-64 ; Operating Range: Industrial ; Pin Count: 64 ; Operating Temperature: -40 to 85 C (-40 to 185

ST72P361J9T5XXXTR : 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; ROM Type: Flash ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 48 ; Package Type: TQFP, Other, 10 X 10 MM, ROHS COMPLIANT, PLASTIC, TQFP-64 ; Operating Range: Industrial ; Pin Count: 64 ; Operating Temperature: -40 to 85 C (-40 to 185

Same catergory

ERA22-02 : . Ultra small package, possible for 5mm pitch automatic insertion High voltage by mesa design High reliability Applications Item Repetitive peak reverse voltage Average forward current Surge current Operating junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Resistive load (Ta=40C) Sine wave 10ms Conditions Rating to +140 Unit.

FFA20U20DN : 20A/200V Ultra Fast Recovery Rectifier. Ultrafast with soft recovery Low forward voltage Applications Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-3P Symbol VRRM IF(AV) IFSM TJ, TSTG (per diode) TC=25C unless otherwise noted Value to +150 Units A C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive.

KDV239E : = Vco For UHF Band Radio ;; Package = Esc.

LS358 : Log Conformance, Monolithic Dual, PNP Transistor. LOG CONFORMANCE re 1 from ideal TYP. C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE @ 25C (unless otherwise noted) Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor 5 E2 ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL.

NSB8AT : Glass Passivated General Purpose Plastic Rectifier. GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High forward current capability High surge current capability Low forward voltage drop Glass passivated chip junction High temperature soldering in accordance with CECC 802 / Reflow guaranteed Case: JEDEC TO-263AA molded plastic.

SMBT3906SE6327 : PNP Silicon Switching Transistor Array. PNP Silicon Switching Transistor Array High DC current gain: to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package Complementary type: SMBT 3904S (NPN) Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current.

TA8637BF : Bipolar Linear Integrated Circuit ( VHF Modulator For VCR or VDP ).

MRF7S19100N : 19301990 MHz, 29 W Avg., 28 V Single WCDMA Lateral NChannel RF Power MOSFETs The MRF7S19100NR1 and MRF7S19100NBR1 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Link Product Picture.

06035C681J4T4A : CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.00068 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 6.80E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style:.

CDRH65NP-100MB : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0510 ohms ; Rated.

ER58120RJT : RESISTOR, WIRE WOUND, 7 W, 5 %, 100 ppm, 120 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 120 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 7 watts (0.0094 HP) ; Standards.

LQN2AR10K04M01 : 1 ELEMENT, 0.1 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: ALUMINA ; Lead Style: J ; Application: General Purpose, RF Choke ; Inductance Range: 0.1000 microH ; Rated DC Current: 380 milliamps.

MS350RAT1N7KSC : 1 ELEMENT, 0.00165 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Air ; Lead Style: WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 0.0017 microH ; Rated DC Current: 1600 milliamps ; Operating Temperature: -55 to 155 C (-67 to 311 F).

RC-RC55LFC100RBT : RES,AXIAL,METAL FILM,100 OHMS,350WV,.1% +/-TOL,-50,50PPM TC. s: Category / Application: General Use.

ZCF10 : JUMPER, CARBON FILM, 0.1 W, 0 ohm - 0 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: CarbonFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF ; Operating Temperature: -55 to 155 C (-67 to 311 F).

2SC4815-AZ : 5 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN. The is a power transistor developed for high-speed switching and low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping s and for mounting cost reduction. High hFE and low VCE(sat): VCE(sat) 0.3 V @IC 0.15 A hFE 100 @VCE.

2SC6021-TL : 10000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: TP-FA, 3 PIN.

 
0-C     D-L     M-R     S-Z