Details, datasheet, quote on part number: 2N6547
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionHigh Power NPN Silicon Transistor
CompanyST Microelectronics, Inc.
DatasheetDownload 2N6547 datasheet
Cross ref.Similar parts: 2N526, 2N5387, 2N5388, 2N5389, 2N6546, 2N6573, 2N6574, 2SC1434, 2SC1870, 2SC2191
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Features, Applications



DESCRIPTION The is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal case. It is particulary intended for switching and industrial applications from single and tree-phase mains.

Symbol V CER V CES V CEO VEBO IC ICM BM P tot T stg Tj Parameter Collector-Emitter Voltage 50 ) Collector-Emitter Voltage = 0) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation o C Storage Temperature Max. Operating Junction Temperature Value to200 200 Unit

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CES I CER I EBO Parameter Collector Cut-off Current = 0) Collector Cut-off Current 10 ) Emitter Cut-off Current = 0) Test Conditions VCE 850 V VCE 850 V VCE 850 V VEB o C Min. Typ. Max. Unit mA V

V CEO(sus) Collector-Emitter Sustaining Voltage 0) V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance

Symbol ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions s Min. Typ. Max. 4 0.7 Unit s

Symbol ts tf Parameter Storage Time Fall Time Test Conditions o C Min. Typ. Max. 5 1.5 Unit s


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