Details, datasheet, quote on part number: 2N6547
Part2N6547
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionHigh Power NPN Silicon Transistor
CompanyST Microelectronics, Inc.
DatasheetDownload 2N6547 datasheet
Cross ref.Similar parts: 2N526, 2N5387, 2N5388, 2N5389, 2N6546, 2N6573, 2N6574, 2SC1434, 2SC1870, 2SC2191
Quote
Find where to buy
 
  

 

Features, Applications

STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED

APPLICATIONS SWITCH MODE POWER SUPPLIES s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION The is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal case. It is particulary intended for switching and industrial applications from single and tree-phase mains.

Symbol V CER V CES V CEO VEBO IC ICM BM P tot T stg Tj Parameter Collector-Emitter Voltage 50 ) Collector-Emitter Voltage = 0) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation o C Storage Temperature Max. Operating Junction Temperature Value to200 200 Unit

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CES I CER I EBO Parameter Collector Cut-off Current = 0) Collector Cut-off Current 10 ) Emitter Cut-off Current = 0) Test Conditions VCE 850 V VCE 850 V VCE 850 V VEB o C Min. Typ. Max. Unit mA V

V CEO(sus) Collector-Emitter Sustaining Voltage 0) V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance

Symbol ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions s Min. Typ. Max. 4 0.7 Unit s

Symbol ts tf Parameter Storage Time Fall Time Test Conditions o C Min. Typ. Max. 5 1.5 Unit s

 

Some Part number from the same manufacture ST Microelectronics, Inc.
2N6668 Silicon PNP Power Darlington Transistor
2N7000 N-channel 60V - 1.8 Ohm - 0.35A SOT23-3L - TO-92 STripFET™I MOSFET
2N720A Epitaxial Planar NPN
2N918 Hfe Min 20 FT TYP 600 MHZ Transistor Polarity NPN Current ic Continuous Max 0.05 a Voltage Vcbo 30 V Voltage Vceo 15 V Current ic (hfe) 3 ma Power Ptot 0.2 W
2N930 Transistor
2SD1398 RF & Microwave Transistor 850-960 MHZ Applications, 24 Volts, 53W
2SD2012 NPN Silicon Power Transistor
332350 High Voltage Ignition Coil Driver NPN Power Darlington
486DX-CORE Fully Static 3.3V 486 Asic Core
54VCXH162244 Low Voltage CMOS 16-BIT Bus Buffer (3-STATE Inv. With 3.6V Tolerant Inputs And Outputs
54VCXH162245 Rad Hard Low Volt. CMOS 16-BIT Bus TRANSCEIVER(3-STATE) With 3.6V Tolerant Inputs And Outputs
54VCXH162373 Low Voltage CMOS 16-BIT Bus Buffer (3-STATE Inv. With 3.6V Tolerant Inputs And Outputs
54VCXH162374 Low Voltage CMOS 16-BIT D-type Flip-flop (3-STATE) With 3.6V Tolerant Inputs And Outputs
54VCXHR162245 Low Voltage CMOS 16-BIT Bus Transceiver (3-STATE) With 3.6V Tolerant Inputs And Outputs
57C43C-25 High Speed 4k X 8 CMOS Prom/rPROM
57C49C-25 High Speed 8k X 8 CMOS Prom/rPROM
57C51C-35 High Speed 16k X 8 CMOS Prom/rPROM
68901N04 Multi.function Peripheral
74AC00 Quad 2-INPUT NAND Gate
74AC02 Quad 2-INPUT NOR GATE
74AC04 Hex Inverter

M295V040B-55N1TR : 4 Mbit 512kb X8, Uniform Block Single Supply Flash Memory

PSD913F2V-C-20B81I : Flash In-system Programmable Isp Peripherals For 8-bit MCUs

TS951 : Operational Amplifiers Input/output rail-to-rail low power operational amplifier

PSD834F2-20JI : Flash In-system Programmable ISP Peripherals For 8-bit MCUs

M2404WDW6TP/S : 16kbit, 8kbit, 4kbit, 2kbit and 1kbit Serial I2C Bus Eeprom

M93C66-DS3G/S : 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 Specifications: Density: 4 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 2 MHz ; Logic Family: CMOS ; Supply Voltage: 5V ; Package Type: 3 X 3 MM, TSSOP-8, TSSOP ; Pins: 8 ; Operating Range: AUTOMOTIVE ; Operating Tempera

M95080-WDW3TP/G : 1K X 8 SPI BUS SERIAL EEPROM, PDIP8 Specifications: Density: 8 kbits ; Number of Words: 1 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 5 MHz ; Supply Voltage: 5V ; Package Type: LEAD FREE, PLASTIC, DIP-8, DIP ; Pins: 8 ; Operating Range: AUTOMOTIVE ; Operating Temperature: -40 to 125 C

ST72F361AR7TCRS : 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 8 MHz ; ROM Type: Flash ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 50 ; Package Type: LFQP, Other, 10 X 10 MM, ROHS COMPLIANT, LQFP-64 ; Operating Range: Industrial ; Pin Count: 64 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Feat

Same catergory

BC847UF : Small Signal Transistor, General Purpose Bipolar Transistor. Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector.

FGP30N6S2 : 600V, SMPS ii Series N-channel Igbt. The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited.

HAT1036R : Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

PDTC113Z : NPN Resistor-equipped Transistor; R1 = 1 Kohm, R2 = 10 Kohm. Built-in Bias Resistors Reduces Component Count Simplifies Circuit Design Reduces Pick And Place Costs. Applications General Purpose Switching And Amplification Circuit Driver. Inverter And Interface Circuits.

SMCG5.0thruSMCG170 : 5.0v Thru 170v 1500 Watt Transient Absorption Zener Diode.

DIM400GCM33-F : IGBT Chopper Module The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A..

ZXMP3F36N8 : 30V P-channel Enhancement Mode MOSFET Packaged In SO8 30V P-channel enhancement mode MOSFET packaged in SO8.

AUIRGP50B60PD1 : 600V Automotive Warp2 150kHz Copack IGBT In A TO-247AC Package IR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufacturing and assembly sites and a supply chain that fully complies with the challenging demands and expectations of the automotive industry. Our five product lines.

C0805N750F1GMH : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.000075 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 7.50E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

KMA4VB221M6X7LL : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 4 V, 220 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 220 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 4 volts ; Leakage Current: 8.8 microamps ; ESR: 2637 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67.

MRC1-100-R100-F-13 : RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 100 ppm, 0.1 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF ; Resistance Range: 0.1000 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 1 watts (0.0013.

QL300W : RESISTOR, WIRE WOUND, 300 W, 5 %, 8 ohm - 150000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED.

S310-T3-LF : 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB. s: Rectifier Configuration / Technology: Schottky ; Package: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 3000 mA ; RoHS Compliant: RoHS.

SQ4920EY-T1-GE3 : 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0160 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SOP-8 ; Number of units in IC: 2.

VCR2N-E3 : N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA. s: Polarity: N-Channel ; rDS(on): 60 ohms ; PD: 300 milliwatts ; Package Type: LEAD FREE, 3 PIN ; Number of units in IC: 1.

1N5551USE3 : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

2N6798-QR : 5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 4 ohms ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN ; Number of units in IC: 1.

 
0-C     D-L     M-R     S-Z