Details, datasheet, quote on part number: 2N6562
Part2N6562
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionDescription = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 450 ;; Hfe Min/max = 10/40 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.75 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 10.0 ;; PT Max (W) = 175.0 ;; = ;; Case Type = TO-61/I ;; Chip Type = 105
CompanySolitron Devices, Inc.
 
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Some Part number from the same manufacture Solitron Devices, Inc.
2N6563 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 300 ;; Hfe Min/max = 10/50 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 0.75 ;; @ IC(A) = 10.0 ;; FT Min (MHz) = 15.0 ;; PT Max (W) = 175.0 ;; = ;; Case
2N656A Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
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2N6660
2N6661
2N7104 Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FMN1.2 ;; V(br)dssmin (V) = 30 ;; Igssmax (pA) = 10 ;; Vgs(h) Max (V) = 0.5 ;; Vgs(h) Max (V) = 2.0 ;; Idssmax (nA) = 10 ;; R(on)
2N7105
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2N7109
3N163 Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FMP1.1 ;; Page Number = E24+E25
3N165 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = TO-99 ;; Geometry = DFMP.1 ;; BVGSS Min (V) = -40 ;; Cissmax (pF) = -10 ;; Vgss(off) Min (V) = -2.0 ;; Vgss(off) Max (V) = -5.0 ;; Ldssmin
3N169 Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FMN1.1 ;; V(br)dssmin (V) = 25 ;; Igssmax (pA) = 10 ;; Vgs(h) Max (V) = 0.5 ;; Vgs(h) Max (V) = 1.5 ;; Idssmax (nA) = 10 ;; R(on)
3N172 Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FMPZ1.1 ;; Page Number = E26+E27
3N188 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = TO-99 ;; Geometry = DFMPZ2 ;; BVGSS Min (V) = -40 ;; Cissmax (pF) = -200 ;; Vgss(off) Min (V) = -2.0 ;; Vgss(off) Max (V) = -5.0 ;; Ldssmin
3N190
500XC001 VR Min.volts = 50 ;; VF @Max. Volts = 1.2 ;; 1FAMPS = 1.5 ;; TRR Nsec = 200 ;; Page No. = 120

KS3968A : Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max (V) = 8.0 ;; Lgssmax (nA) = 2.00 ;; Ylsmin (uMhos) = 1600.0 ;; "@Freq (MhZ) = 100 ;; Idssmi

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SDR08600JAAEMD1 : 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 8000 mA ; Pin Count: 3 ; Number of Diodes: 2

SDS60045JAASNU : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 60000 mA ; VRRM: 45 volts

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SDS60045JECWLU : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 60000 mA ; Pin Count: 3 ; Number of Diodes: 2

 
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