Details, datasheet, quote on part number: 2N6546JANTXTXV
Part2N6546JANTXTXV
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionMil-s- 19500/ = 525 ;; Vcbo Volts = 850 ;; Vceo Volts = 450 ;; Ic (CONT.) Amps = 15.0 ;; Power (@TC =25 C) Watts = 175 ;; = ;; Case Type = TO-3 ;; Chip Type = 105
CompanySolitron Devices, Inc.
 
  
Some Part number from the same manufacture Solitron Devices, Inc.
2N6547 Description = Switchtron Power Transistor ;; = ;; Polarity = NPN ;; VCEO(sus) Volts = 400 ;; 1C(Peak) Amps = 30 ;; Hfe Min/max = 12/60 ;; @ 1C Amps = 5.0 ;; VCE(sat) Max = 1.50 ;; @ ic Amps = 10.0 ;; 1TMHz
2N6547JANTXTXV Mil-s- 19500/ = 525 ;; Vcbo Volts = 650 ;; Vceo Volts = 350 ;; Ic (CONT.) Amps = 15.0 ;; Power (@TC =25 C) Watts = 175 ;; = ;; Case Type = TO-3 ;; Chip Type = 105
2N6560 Description = Switchtron Power Transistor ;; = ;; Polarity = NPN ;; VCEO(sus) Volts = 450 ;; 1C(Peak) Amps = 15 ;; Hfe Min/max = 10/40 ;; @ 1C Amps = 5.0 ;; VCE(sat) Max = 0.75 ;; @ ic Amps = 5.0 ;; 1TMHz
2N6561
2N6562 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 450 ;; Hfe Min/max = 10/40 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.75 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 10.0 ;; PT Max (W) = 175.0 ;; = ;; Case
2N6563 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 300 ;; Hfe Min/max = 10/50 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 0.75 ;; @ IC(A) = 10.0 ;; FT Min (MHz) = 15.0 ;; PT Max (W) = 175.0 ;; = ;; Case
2N656A Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N6656 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = FVNZ1.8 ;; Page Number =
2N6657
2N6658
2N6659 Description = Low Power Field Effect Transistor ;; Case Style = TO39 ;; Geometry = FVNZ1.8 ;; Page Number =
2N6660
2N6661
2N7104 Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FMN1.2 ;; V(br)dssmin (V) = 30 ;; Igssmax (pA) = 10 ;; Vgs(h) Max (V) = 0.5 ;; Vgs(h) Max (V) = 2.0 ;; Idssmax (nA) = 10 ;; R(on)
2N7105
2N7106
2N7107
2N7108
2N7109
3N163 Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FMP1.1 ;; Page Number = E24+E25
3N165 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = TO-99 ;; Geometry = DFMP.1 ;; BVGSS Min (V) = -40 ;; Cissmax (pF) = -10 ;; Vgss(off) Min (V) = -2.0 ;; Vgss(off) Max (V) = -5.0 ;; Ldssmin

SDF10N100JEAXHSZ : 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.2 ohms ; Number of units in IC: 1

SDF120JAAXHSB : 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2700 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF360JEASGD1N : 25 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.2100 ohms ; Package Type: TO-258AA, 3 PIN ; Number of units in IC: 1

SDF4NA100SXHVN : 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 4 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDFE22JABXGD1N : 1.6 A, 800 V, 7.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 800 volts ; rDS(on): 7.8 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDR08400JDAXJU : 8 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Number of Diodes: 1 ; VRRM: 400 volts ; IF: 8000 mA ; trr: 0.0350 ns

SDS10045JABVLU1 : 10 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 45 volts

530XBA002600950 : 3 A, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: DIE-1 ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 3000 mA ; trr: 0.0650 ns

 
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