Details, datasheet, quote on part number: SK15DGDL063
DatasheetDownload SK15DGDL063 datasheet
Find where to buy


Features, Applications

Absolute Maximum Ratings Symbol Conditions Values Units IGBT Inverter (For chopper IGBT please refer SK 10 BGDL 063)

SEMITOP 3 3-phase bridge rectifier + brake chopper +3-phase bridge inverter

Characteristics Symbol Conditions min. typ. max. Units IGBT Inverter (For chopper IGBT please refer SK 10 BGDL 063)

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.


Some Part number from the same manufacture Semikron
SK15GH063 Semitop(r) 2 Igbt Module
SK1Series Rectifier Diodes 1 to 1.6 KV
SK20GAL123 Semitop 2,igbt Module
SK20GD123 Semitop 3,igbt Module
SK20GH123 Semitop(r) 2 Igbt Module
SK25GB063 Semitop(r) 1 Igbt Module
SK25GB065 Semitop(r) 1 Fast Igbt Module
SK25GD063 Semitop (r) 3 Igbt Module
SK25GH063 Semitop(r) Igbt Module
SK25KQ Semitop(r) 1, Antiparallel Thyristor Module
SK25UT Semitop(r) 3 Three Phase Antiparallel Thyristor Module
SK30GB123 Semitop(r) 2 Igbt Module
SK30GD123 Semitop(r) 3, Igbt Module
SK30GH123 Semitop, Igbt Module

1N5356B : Low Power Rectifier

SKKD380/16 :

SK20DGD065ET : 3-phase Bridge Rectifier + Brake Chopper + 3-phase Bridge Inverter

3KP23 : Unidirectional and Bidirectional Transient Voltage Suppressor Diodes

SKT16/04D : Line Thyristor

BYZ50A37 : Silicon Protectifiers with TVS Characteristics High-temperature Diodes

SKHI23R : 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, XMA Specifications: Device Type: Line / Bus Driver ; Supply Voltage: Other, 15 ; Operating Temperature: -25 to 85 C (-13 to 185 F)

SKKH162/20EH4 : 250 A, 800 V, SCR Specifications: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 250 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: CASE A22, SEMIPACK 2, 5 PIN ; Pin Count: 5

SKKT57B/20E : 95 A, 1800 V, SCR Specifications: VDRM: 1800 volts ; VRRM: 1800 volts ; IT(RMS): 95 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: CERAMIC, CASE A48, SEMIPACK-7 ; Pin Count: 7

Same catergory

20BSA : Silicon Planar Zener Diode.

2N2218A : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 40V ;; IC(cont) = 0.8A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 10V / 150mA ;; FT = 250MHz ;; PD = 0.8W.

2N3441 : 140V NPN Silicon Power Transistor.

2SC4891 : NPN Triple Diffused Planar Silicon Transistor, Very High-drfinition CTR Display Video Output Application.

DLSR1010 : Package Type : Melf, if : 1.0A, VRM : 100V. Schottky Barrier Rectifier Low Forward Voltage Low Power Loss For High Efficiency High Current Capability Operating Temperature: to +125C Storage Temperature: to +150C Maximum Thermal Resistance; 30 C/W Junction To Lead Device Marking Maximum Recurrent Peak Reverse Voltage 80V 100V Maximum RMS Voltage Maximum DC Blocking Voltage 80V 100V Average.

ERB12-01 : . Compact size, light weight High reliability Applications Item Repetitive peak reverse voltage Average forward current Surge current Operating junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Resistive load Sine wave 10ms Conditions Rating (Ta=25C) 40 Unit A C Item Forward voltage drop Reverse current Symbol VFM IRRM Conditions.

HUFA75433S3S : N-channel UltraFET MOSFETs 60v, 64a, 16m. These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

TPS2812PW : Dual High-speed MOSFET Drivers. Industry-Standard Driver Replacement 25-ns Max Rise/Fall Times and 40-ns Max Propagation Delay 1-nF Load, VCC V 2-A Peak Output Current, VCC V 5-A Supply Current Input High or Low to 14-V Supply-Voltage Range; Internal Regulator Extends Range to 125C Ambient-Temperature Operating Range The TPS28xx series of dual high-speed MOSFET drivers are capable.

000-6824-37 : DATACOM TRANSFORMER FOR LAN; 10/100 BASE-T; AUTOMDIX APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

03028BX222AJZL : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.0022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0022 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

IRF520AJ69Z : 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2000 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

KTC2815D-O : 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: DPAK-3.

PE-68279 : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Input Voltage: 11.5 to 12.5 volts ; Output Voltage: 9 volts ; Operating Temperature: -40 to 130 C (-40 to 266 F).

S20LC30 : 10 A, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 10000 mA ; Package: TO-3, MTO-3P, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

SPFY9140SLP : 13 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2000 ohms ; Number of units in IC: 1.

0-C     D-L     M-R     S-Z