Details, datasheet, quote on part number: 2N7334
Part2N7334
CategoryDiscrete => Array
TitleArray
DescriptionDescription = Quad MOSFET ;; Package = 14 Pin Cerdip ;; Polarity = N-channel ;; Bipolar: = ;; Vceo = 100V ;; IC(cont) = 4A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = - ;; FT = 0.7Ω
CompanySemelab Plc
DatasheetDownload 2N7334 datasheet
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Features, Applications

14 LEAD DUAL IN LINE QUAD N CHANNEL POWER MOSFETS

HERMETICALLY SEALED DYNAMIC dv/dt RATING SIMPLE DRIVE REQUIREMENTS FOR AUTOMATIC INSERTION SIMPLE DRIVE REQUIREMENTS EASE OF PARALLELING 4 N-CHANNEL CO-PACKAGED HEXFETS LIGHTWEIGHT

ABSOLUTE MAXIMUM RATINGS(Tcase = 25C unless otherwise stated)

VGS ID IDM PD EAS dv/dt TJ , Tstg RJC RJCA Gate Source Voltage Continuous Drain Current (VGS 10V , Tcase = 25C) Continuous Drain Current (VGS 10V , Tcase = 100C) Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient 6.25C/W 175C/W

Notes 1) Pulse Test: Pulse Width 2) @ VDD 25 , Peak 1A , Starting 3) @ ISD 1A , di/dt 75A/s , VDD BVDSS 150C , Suggested = 24

STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage BVDSS Temperature Coefficient of TJ RDS(on) Breakdown Voltage Static Drain Source OnState Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Continuous Source Current Pulse Source Current

VGS(th) Gate Threshold Voltage gfs IDSS IGSS
Diode Forward Voltage 1 Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time

PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)

Notes 1) Pulse Test: Pulse Width 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature.


 

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