Details, datasheet, quote on part number: 2N7224
Part2N7224
CategoryDiscrete
DescriptionN-channel Power MOSFET
CompanySemelab Plc
DatasheetDownload 2N7224 datasheet
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Features, Applications

FEATURES
REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)

VGS ID IDM PD EAS dv/dt TJ , Tstg RqJC RqJCS RqJCA Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction-to-Ambient

Notes 1) Pulse Test: Pulse Width 300ms, d VDD 25W , Peak 34A , Starting 3) @ ISD 34A , di/dt 70A/ms , VDD BVDSS 150C , SUGGESTED = 2.35W

ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated)
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage DBVDSS Temperature Coefficient of

Breakdown Voltage Static Drain Source OnState Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Continuous Source Current Pulse Source Current

VGS(th) Gate Threshold Voltage gfs IDSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time

PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)

Notes 1) Pulse Test: Pulse Width 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature.


 

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2N727 Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 20V ;; IC(cont) = 0.05A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = V / 0mA ;; FT = - ;; PD = 0.3W
2N727CSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 20V ;; IC(cont) = 0.05A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = V / 0mA ;; FT = - ;; PD = 0.3W
2N727DCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 20V ;; IC(cont) = 0.05A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = V / 0mA ;; FT = - ;; PD = 0.3W
2N7334 Description = Quad MOSFET ;; Package = 14 Pin Cerdip ;; Polarity = N-channel ;; Bipolar: = ;; Vceo = 100V ;; IC(cont) = 4A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = - ;; FT = 0.7Ω
2N7335 Description = Quad MOSFET ;; Package = 14 Pin Cerdip ;; Polarity = P-channel ;; Bipolar: = ;; Vceo = 100V ;; IC(cont) = 0.75A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = - ;; FT = 1.4Ω
2N869 Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 25V ;; IC(cont) = 0.1A ;; HFE(min) = 20 ;; HFE(max) = - ;; @ Vce/ic = 5V / 10mA ;; FT = 100MHz ;; PD = 0.36W
2N869A
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2N869AXCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 25V ;; IC(cont) = 0.1A ;; HFE(min) = 20 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 10mA ;; FT = 100MHz ;; PD = 0.36W
2N869AXDCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 25V ;; IC(cont) = 0.1A ;; HFE(min) = 20 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 10mA ;; FT = 100MHz ;; PD = 0.36W

2N2891LCC4 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 2A ;; HFE(min) = 50 ;; HFE(max) = 150 ;; @ Vce/ic = 2V / 1A ;; FT = 30MHz ;; PD = 0.8W

2N3676 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 90V ;; IC(cont) = 1A ;; HFE(min) = 12 ;; HFE(max) = 60 ;; @ Vce/ic = 1V / 1A ;; FT = 1MHz ;; PD = 8.8W

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