Details, datasheet, quote on part number: M377S6428BT3
PartM377S6428BT3
CategoryMemory => DRAM => SDR SDRAM => Modules => 512 MB
Description64mx72 Sdram Dimm With PLL & Register Based on Stacked 64mx4, 4banks, 4k Ref., 3.3v Sdrams With SPD
CompanySamsung Semiconductor, Inc.
 
  
Some Part number from the same manufacture Samsung Semiconductor, Inc.
M377S6428MT1 Description = M377S6428MT1 (Intel 1.2 Ver Base) 64Mx72 Sdram Dimm With PLL & Register Based on Stacked 64Mx4, 4Banks 4K Ref., 3.3V Sdrams With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/
M377S6428MT2 64mx72 Sdram Dimm With PLL & Register Based on Stacked 64mx4, 4banks, 4k Ref., 3.3v Sdrams With SPD
M377S6428MT3
M377S6450AT3 Description = M377S6450AT3 (Intel 1.2 Ver Base) 64Mx72 Sdram Dimm With PLL & Register Based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/
M377S6450BT3 Description = M377S6450BT3 (Intel 1.2 Ver Base) 64Mx72 Sdram Dimm With PLL & Register Based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/
M377S6450CT3
M377S6450DT3 Description = M377S6450DT3 64M X 72 Sdram Dimm With PLL & Register Based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/ Interface = 4B/LVTTL
M377S6453AT0 Description = M377S6453AT0 (Intel 1.2 Ver Base) 64Mx72 Sdram Dimm With PLL & Register Based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/
M377S6453BT0 Description = M377S6453BT0 (Intel 1.2 Ver Base) 64Mx72 Sdram Dimm With PLL & Register Based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/
M377S6453CT0 Description = M377S6453CT0 64M X 72 Sdram Dimm With PLL & Register Based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/ Interface = 4B/LVTTL
M377S6453DT0 Description = M377S6453DT0 (Intel 1.2 Ver Base) 64Mx72 Sdram Dimm With PLL & Register Based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/
M381L1713BT0 Description = M381L1713BT0 16Mx72 DDR Sdram 184pin Dimm Based on 16Mx8 ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = A2,B0,A0 ;; #of Pin = 184 ;; Power
M381L1713BT1 Description = M381L1713BT1 16Mx72 DDR Sdram 184pin Dimm Based on 16Mx8 ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = A0,A2,B0 ;; #of Pin = 184 ;; Power
M381L1713CT1
M381L1713CTL Description = M381L1713CTL 16Mx72 DDR Sdram 184pin Dimm Based on 16Mx8 ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = A0,A2,B0 ;; #of Pin = 184 ;; Power
M381L1713DTL Description = M381L1713DTL 16Mx72 DDR Sdram 184pin Dimm Based on 16Mx8 ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = B3,A2,B0,A0 ;; #of Pin = 184 ;; Power
M381L1713DTM Description = M381L1713DTM 16M X 72 DDR Sdram 184pin Dimm Based on 16M X 8 ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = B3 ;; #of Pin = 184 ;; Power
M381L1713ETM Description = M381L1713ETM 184Pin Unbuffered Dimm Based on 128Mb E-die (x8) ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = CC,C4,B3,AA,A2,B0
M381L2923BTM Description = M381L2923BTM 184Pin Unbuffered Dimm Based on 512Mb B-die (x8, X16) ;; Density(MB) = 1024 ;; Organization = 128Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,C4,B3,AA,A2,B0
M381L2923MT1
M381L2923MTL Description = M381L2923MTL 128Mx72 DDR Sdram 184pin Dimm Based on 64Mx8 ;; Density(MB) = 1024 ;; Organization = 128Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; #of Pin = 184 ;; Power

K4C89363AF-GCFB : Network DRAM->288M bit Description = K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ;; Organization = 8Mx36 ;; Voltage(V) = 2.5 ;; Refresh = 8K/32ms ;; Bank/ Interface = 4B/SSTL_1.8 ;; Speed(MHz) = F6,FB,F5 ;; TRAC(ns) = 20~25 ;; Package = 144FBGA ;; Production Status = Engineering Sample:4Q'

K4N26323AE-GC : ->Graphics Memory Description = K4N26323AE 1M X 32Bit X 4 Banks GDDR2 Synchronous DRAM With Differential Data Strobe And DLL ;; Organization = 4Mx32 ;; Vdd/Vddq(V) = 2.5/1.8 ;; Speed(ns) = 500,450,400 ;; Refresh = 4K/32m ;; Package = 144FBGA ;; Interface = SSTL18 ;; Production Status = Mass Production ;; Comments = -

K4S280432A-TC/L1L : Description = K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ;; Organization = 32Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L,10 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = PC100,PC133

K4S640432H-TCL75 : Description = K4S640432H 4M X 4Bit X 4 Banks Synchronous DRAM ;; Organization = 16Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Customer Sample ;; Comments = -

K6F1616R6M-EF85 : Description = K6F1616R6M 1M X 16 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 1Mx16 ;; Vcc(V) = 1.65~2.2 ;; Speed-tAA(ns) = 70,85 ;; Operating Temperature = i ;; Operating Current(mA) = 48TBGA ;; Standby Current(uA) = 3 ;; Package = 1 ;; Production Status = Eol ;; Comme

K9K4G08U1M-I : 512M x 8 Bit NAND Flash Memory Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXU0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market.

K8D1716UTC-TI09 : 16M Bit (2M X8/1m x16) Dual Bank NOR Flash Memory

SLD-63538270X : General Handling Precautions

K4T1G084QF-BCE70 : 128M X 8 DDR DRAM, 0.45 ns, PBGA60 Specifications: Memory Category: DRAM Chip ; Density: 1073742 kbits ; Number of Words: 128000 k ; Bits per Word: 8 bits ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 ; Pins: 60 ; Supply Voltage: 1.8V ; Access Time: 0.4500 ns ; Operating Temperature: 0 to 85 C (32 to 185 F)

K5A3340YTC-T7550 : SPECIALTY MEMORY CIRCUIT, PBGA69 Specifications: Density: 33554 kbits ; Number of Words: 2000 k ; Bits per Word: 16 bits ; Package Type: 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 ; Pins: 69 ; Supply Voltage: 3V ; Operating Temperature: -40 to 85 C (-40 to 185 F)

 
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