Details, datasheet, quote on part number: BUK9560-100A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK9560-100A; BUK9660-100A; Trenchmos (tm) Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9560-100A datasheet
Cross ref.Similar parts: STP24NF10, CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: (D 2-PAK).

TrenchMOSTM technology Q101 compliant 175 C rated Logic level compatible.

s Automotive and general purpose power switching: 24 V and 42 V loads x Motors, lamps and solenoids.

Table 1: Pin 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
drain (d) source (s) mounting base; connected to drain (d)

Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS 5 V Tmb 25 C VGS 25 C VGS 25 C Typ Max Unit W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) non-repetitive gate-source voltage drain current (DC) 50 s Tmb = 25 C; VGS 5 V; Figure 2 and 3 Tmb = 100 C; VGS 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 20 A; VDS 100 V; VGS 5 V; RGS 50 ; starting Tmb 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 RGS 20 k Conditions Min Max Unit A mJ

Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BUK9575-100A BUK9575-100A; BUK9675-100A; Trenchmos (tm) Transistor Logic Level Fet
BUK9575-55 Trenchmos Transistor Logic Level Fet
BUK9575-55A BUK9575-55A; BUK9675-55A; Trenchmos (tm) Logic Level Fet
BUK95E06-55B BUK95/96/9E06-55B; Trenchmos (tm) Logic Level Fet
BUK9604-40A BUK95/96/9E04-40A; Trenchmos (tm) Logic Level Fet
BUK9605-30A BUK9605-30A; Trenchmos (tm) Transistor Logic Level Fet
BUK9606-30 Trenchmos Transistor Logic Level Fet
BUK9606-40B BUK95/9606-40B; Trenchmos (tm) Logic Level Fet
BUK9606-55A BUK9506-55A; BUK9606-55A; BUK9E06-55A; Trenchmos (tm) Logic Level Fet
BUK9606-75B BUK95/9606-75B; Trenchmos (tm) Logic Level Fet
BUK9607-30B BUK95/9607-30B; Trenchmos (tm) Logic Level Fet
BUK9608-55 BUK9608-55; Trenchmos (tm) Transistor Logic Level Fet
BUK9608-55A BUK95/9608-55A; Trenchmos (tm) Logic Level Fet
BUK9608-55B BUK95/9608-55B; Trenchmos (tm) Logic Level Fet
BUK9609-40B BUK95/9609-40B; Trenchmos (tm) Logic Level Fet
BUK9609-55A BUK95/9609-55A; Trenchmos (tm) Logic Level Fet
BUK9609-75A BUK9509-75A; BUK9609-75A; Trenchmos (tm) Logic Level Fet
BUK9610-100B BUK95/9610-100B; Trenchmos (tm) Logic Level Fet
BUK9610-30 Trenchmos Transistor Logic Level Fet
BUK9610-55A BAT160 Series; Schottky Barrier Double Diodes
BUK9611-55A BUK9511-55A; BUK9611-55A; Trenchmos (tm) Logic Level Fet

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