Details, datasheet, quote on part number: BUK9535-55A
PartBUK9535-55A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK9535-55A; BUK9635-55A; Trenchmos (tm) Transistor Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9535-55A datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS
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Features, Applications

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404. Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 5 V VGS 10 V MAX. UNIT C m

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS VGSM ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS k tp50S Tmb 25 C Tmb 100 C Tmb 25 C Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO220AB) Thermal resistance junction to ambient(SOT404) CONDITIONS in free air Minimum footprint, FR4 board TYP. 60 50 MAX. 1.8 UNIT K/W

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55C VDS = VGS; = -55C VDS 55 V; VGS 0 V; VGS 10 V; VDS 0 V VGS 25 A VGS 25 A VGS = 175C MIN.

Tmb = 25C unless otherwise specified SYMBOL Ciss Coss Crss tr td off Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS 0 V; VDS = 1 MHz MIN. TYP. MAX. UNIT ns nH

Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad

= 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 34 A; VGS 34 A; -dIF/dt = 100 A/s; VGS 30 V TYP. MAX. 133 1.2 UNIT ns C

PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy
Fig.3. Safe operating area. Tmb ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.2. Normalised continuous drain current. ID% C = f(Tmb); conditions: VGS 5 V
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
1 For maximum permissible repetitive avalanche current see fig.18. February 2000 3 Rev 1.000

 

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