Details, datasheet, quote on part number: BUK9520-55
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionTrenchmos Transistor Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9520-55 datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19506KCS, CSD19531KCS
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Features, Applications

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 5 V MAX. UNIT °C m

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tmb 25 °C Tmb 100 °C Tmb 25 °C Tmb 25 °C MIN. - 55 MAX. UNIT °C

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.29 UNIT K/W

Tj= 25°C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55°C VDS = VGS; = -55°C VDS 55 V; VGS 0 V; VGS ±5 V; VDS = ±1 mA; VGS = 175°C MIN. TYP.

Tmb = 25°C unless otherwise specified SYMBOL gfs Ciss Coss Crss tr td off Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS 25 A VGS 0 V; VDS = 1 MHz MIN. 20 TYP. MAX. UNIT ns nH

VDD 25 A; VGS = 10 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad

= 25°C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 40 A; VGS 40 A; -dIF/dt = 100 A/µs; VGS 30 V TYP. MAX. 208 1.2 UNIT ns µC

SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS 45 A; VDD 25 V; VGS 5 V; RGS 50 ; Tmb 25 °C MIN. TYP. -

Fig.3. Safe operating area. Tmb ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.2. Normalised continuous drain current. ID% °C = f(Tmb); conditions: VGS 5 V
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BUK9520-55A BUK9520-55A; BUK9620-55A; Trenchmos (tm) Logic Level Fet
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BUK954R4-40B BUK95/964R4-40B; Trenchmos (tm) Logic Level Fet
BUK9560-100A BUK9560-100A; BUK9660-100A; Trenchmos (tm) Logic Level Fet
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