Details, datasheet, quote on part number: BUK9516-75B
DescriptionBUK95/9616-75B; Trenchmos (tm) Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9516-75B datasheet
Cross ref.Similar parts: IPP147N12N3 G, IPP180N10N3 G, STP80N70F4, STP75NF75, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOSTM technology. Product availability: SOT404 (D2-PAK).

s Very low on-state resistance 175 C rated s Q101 compliant s Logic level compatible.

s Automotive systems s Motors, lamps and solenoids 24 V and 42 V loads s General purpose power switching.

Table 1: Pin 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d)

Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 5 V; Figure 2 and 3 Tmb = 100 C; VGS 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 67 A; VDS 75 V; VGS 5 V; RGS 50 ; starting Tmb 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 RGS 20 k Conditions Min -55 Max Unit A mJ

Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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