Details, datasheet, quote on part number: BUK9514-30
PartBUK9514-30
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionTrenchmos Transistor Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9514-30 datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS, CSD19531KCS
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Features, Applications

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 5 V MAX. UNIT C m

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tmb 25 C Tmb 100 C Tmb 25 C Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.2 UNIT K/W

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55C VDS = VGS; = -55C VDS 30 V; VGS 0 V; VGS 5 V; VDS = 1 mA; VGS = 175C MIN. TYP.

Tmb = 25C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss tr td off Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS 69 A; VDD 24 V; VGS 5 V MIN. 12 TYP. MAX. UNIT ns nH

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad

= 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 69 A; VGS 69 A; -dIF/dt = 100 A/s; VGS 25 V TYP.

SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS 35 A; VDD 25 V; VGS 5 V; RGS 50 ; Tmb 25 C MIN. TYP. MAX. 125 UNIT mJ


 

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