Details, datasheet, quote on part number: BUK9508-55A
PartBUK9508-55A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK95/9608-55A; Trenchmos (tm) Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9508-55A datasheet
Cross ref.Similar parts: IPD060N03L G, STP80NF55-06, CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD19503KCS
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: SOT404 (D2-PAK).

TrenchMOSTM technology Q101 compliant 175 C rated Logic level compatible.

s Automotive and general purpose power switching: 12 V and 24 V loads x Motors, lamps and solenoids.

Table 1: Pin 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
drain (d) source (s) mounting base; connected to drain (d)

Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS 5 V Tmb = 25 C; VGS = 25 C; VGS = 25 C; VGS 25 A Typ 6.8 6.4 Max Unit C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 5 V; Figure 2 and 3 Tmb = 100 C; VGS 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 75 A; VDS 55 V; VGS 5 V; RGS 50 ; starting Tmb 25 C

Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
Current is limited by power dissipation chip rating Continuous current is limited by package.
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


 

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