Details, datasheet, quote on part number: BUK9245-55A
PartBUK9245-55A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel TrenchMOS Logic Level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9245-55A datasheet
Cross ref.Similar parts: IPP041N04N G, IPP042N03L G, IPP045N10N3 G, IPP052N06L3 G, STD20NF06L, NTD24N06, NVD5867NLT4G
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Features, Applications

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due 175 C rating

12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids

Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj 25 C; 175 C VGS 5 V; Tmb = 25 C; see Figure 1; see Figure 3 Tmb = 25 C; see Figure 2 VGS 25 C VGS 25 C VGS = 25 C; see Figure 11; see Figure 12 Min Typ 27 31 Max Unit

Quick reference data...continued Parameter Conditions Min Typ Max Unit 62 mJ

Avalanche ruggedness non-repetitive 28 A; Vsup 55 V; drain-source avalanche RGS 50 ; VGS 5 V; Tj(init) = 25 C; unclamped energy gate-drain charge VGS 5 A; VDS = 25 C; see Figure 13

Table 2. Pin 3 mb Pinning information Symbol Description gate drain source mounting base; connected to drain

Table 3. Ordering information Package Name BUK9245-55A DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number

All information provided in this document is subject to legal disclaimers.

Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS 5 V; see Figure 1; see Figure 3 Tmb = 100 C; VGS 5 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb tp 10 s; pulsed; Tmb 25 C Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 2 Conditions Tj 25 C; 175 C RGS 20 k Min -15 -55 Typ Max Unit A mJ

In accordance with the Absolute Maximum Rating System (IEC 60134).

Avalanche ruggedness non-repetitive drain-source 28 A; Vsup 55 V; RGS 50 ; avalanche energy VGS 5 V; Tj(init) = 25 C; unclamped

Continuous drain current as a function of mounting base temperature
Normalized total power dissipation as a function of mounting base temperature

 

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