Details, datasheet, quote on part number: BUK9209-40B
DescriptionTrenchmos (tm) Logic Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK9209-40B datasheet
Cross ref.Similar parts: NTD5802NT4G, STD95N4LF3
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOSTM technology.

s Very low on-state resistance 185 C rated s Q101 compliant s Logic level compatible.
s Automotive systems s Motors, lamps and solenoids 12 V loads s General purpose power switching.
Table 1: Pin 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline
Description gate (g) drain (d) source (s) mounting base; connected to drain (d)

Table 2: Ordering information Package Name BUK9209-40B D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). Version SOT428 Type number

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 5 V; Figure 2 and 3 Tmb = 100 C; VGS 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 75 A; VDS 40 V; VGS 5 V; RGS 50 ; starting 25 C

Current is limited by power dissipation chip rating. Continuous current is limited by package.
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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