|Description||BUK9107-40ATC; Trenchplus Logic Level Fet|
|Company||Philips Semiconductors (Acquired by NXP)|
|Datasheet||Download BUK9107-40ATC datasheet
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: SOT426 (D2-PAK).
Typical on-state resistance m Q101 compliant ESD and overvoltage protection Monolithically integrated temperature sensor for overload protection.
s Automotive and power switching: 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)) x Protected drive for lamps.Table 1: Pin mb Pinning - SOT426, simplified outline and symbol Simplified outline Symbol
Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d)
Table 2: Quick reference data Conditions = 25 °C; IGS(CL) = -2 mA; 1 A Tmb = 25 °C; VGS 5 V Tmb = 25 °C; VGS = 25 °C; VGS = 25 °C; VGS VF SF temperature sense diode forward voltage temperature sense diode temperature coefficient = 25 °C; < +175 °C; 250 µA Typ Max Unit m mV mV/K Symbol Parameter VDSR(CL) drain-source clamping voltage ID Ptot Tj RDSon drain current (DC) total power dissipation junction temperature drain-source on-state resistance© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS 5 V; Figure 2 and 3 Tmb = 100 °C; VGS 5 V; Figure 2 IDM Ptot IDG(CL) IGS(CL) peak drain current total power dissipation drain-gate clamping current gate-source clamping current Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure = 5 ms; = 0.01 continuous = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM Clamping EDS(CL)S non-repetitive drain-source clamping energy unclamped inductive load; 75 A; VDS 40 V; VGS 5 V; RGS 10 k; starting 25 °C Human Body Model; = 100 pF; 1.4 J storage temperature junction temperature reverse drain current (DC) pulsed reverse drain current Tmb 25 °C Tmb = 25 °C; pulsed; 10 µsElectrostatic discharge Vesd electrostatic discharge voltage; pins kV
Voltage is limited by clamping Current is limited by power dissipation chip rating Continuous current is limited by package.
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