Details, datasheet, quote on part number: BUK856-800A
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionInsulated Gate Bipolar Transistor (IGBT)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK856-800A datasheet
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Features, Applications

Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications.

SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss MAX. UNIT mJ

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR VGE IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGE 20 k Tmb 25 C Tmb C Tj Tjmax. VCL V Tj Tjmax. Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60 MAX. 1.0 UNIT K/W

Tmb 25 C unless otherwise specified SYMBOL V(BR)CES VGE(TO) ICES IECS IGES VCEsat PARAMETER Collector-emitter breakdown voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Gate emitter leakage current Collector-emitter saturation voltage CONDITIONS VGE 0.25 mA VCE = VGE; 1 mA VCE 800 V; VGE 25 C VCE 800 V; VGE =125 C VCE -5 V; VGE 0 V VGE 30 V; VCE 0 V VGE 12 A VGE 24 A MIN. 800 3 TYP. MAX. UNIT nA V

Tmb 25 C unless otherwise specified SYMBOL gfe Cies Coes Cres on tr Eon td off tf Eoff on tr Eon td off tf Eoff PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-on Energy Loss Turn-off delay time Turn-off fall time Turn-off Energy Loss Turn-on delay time Turn-on rise time Turn-on Energy Loss Turn-off delay time Turn-off fall time Turn-off Energy Loss CONDITIONS VCE 6 A VGE 0 V; VCE = 1 MHz MIN. 3 TYP. MAX. UNIT ns mJ

12 A; VCC 500 V; VGE = 25C; Inductive Load Energy Losses include all 'tail' losses 12 A; VCC 500 V; VGE = 125C; Inductive Load Energy Losses include all 'tail' losses

Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T
Fig.5. Typical on-state characteristics IC=f(VCE); parameters Tj,VGE
Fig.3. Turn-off Safe Operating Area conditions: Tj Tjmax. = 50
Fig.6. Typical transfer characteristics IC=f(VGE) ; conditions: VCE=15 V; parameter Tj


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