Details, datasheet, quote on part number: BUK856-400IZ
PartBUK856-400IZ
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors)
DescriptionBUK856-400 IZ; Insulated Gate Bipolar Transistor Protected Logic-level Igbt
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK856-400IZ datasheet
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Features, Applications

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection to 2 kV.

SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN. TYP. MAX. UNIT mJ

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE ±VGE IC ICM ICLM ECERS ECERR1 EECR1 Ptot Tstg Tj PARAMETER Collecter-emitter voltage Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed peak value, on-state) Collector current (clamped inductive load) Clamped turn-off energy (non-repetitive) Clamped turn-off energy (repetitive) Reverse avalanche energy (repetitive) Total power dissipation Storage temperature Operating Junction Temperature CONDITIONS 500 µs Continuous Tmb 100 °C Tmb 25 °C Tmb = 25 °C; tp 10 ms; VCE 10 k Tmb = 25 °C; 1 k; see Figs. 23,24 Tmb = 100 °C; 50 Hz Tmb 25 °C MIN. -55 -40 MAX. UNIT W °C

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

1 This applies to short-term operation in ignition circuits with open-secondary ignition coil.

SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60

Tmb 25 °C unless otherwise specified SYMBOL V(BR)CG V(BR)EC ±V(BR)GES VGE(TO) ICES IEC IGES VCEsat PARAMETER Collector-gate zener breakdown voltage Reverse collector-emitter breakdown voltage Gate-emitter breakdown voltage Gate threshold voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Reverse collector current Gate emitter leakage current Collector-emitter on-state voltage CONDITIONS 2 mA -IG 5 mA; 1 mA VCE = VGE; 1 mA VCE = VGE; = 1 mA; Tj 150°C VCE 50 V; VGE 125 °C VCE -20 V VCE = 125°C VGE = 150°C VGE 8 A VGE Tj 150°C MIN. TYP. MAX. UNIT µA V

Tmb 25 °C unless otherwise specified SYMBOL V(CL)CER PARAMETER CONDITIONS MIN. 370 TYP. 410 MAX. 500 UNIT V Collector-emitter clamp voltage 10 A; (peak value) Tj 150°C; Inductive load; see Figs. 23,24 Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-off delay time Fall time Crossover Time Turn-off Energy loss VCE 4 A VGE 0 V; VCE = 1 MHz


Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T
Fig.2. Turn-off Safe Operating Area conditions: Tj Tjmax. 1 k
Fig.5. Derating of ICLM with turn-off dVCE/dt conditions: VCE V; Tj Tjmax.
Fig.3. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE 3.5 V
Fig.6. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE 5 V

 

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