Details, datasheet, quote on part number: BUK7C08-55AITE
DescriptionBUK7C08-55AITE; Trenchplus Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7C08-55AITE datasheet
Cross ref.Similar parts: HUFA75344S3S, STB85NF55L, STB85NF55, STB80NF55L-08, STB80NF55-08, SUP75N06-07L
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ESD and overtemperature protection. Product availability: SOT427 (D2-PAK).

s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor.

s Variable Valve Timing for engines s Automotive and power switching s Electrical Power Assisted Steering s Fan control.

s VDS A s RDSon 6.8 m (typ) 658 mV (typ) = -1.54 mV/K (typ) s ID/Isense = 500 (typ).

Table 1: Pin mb Pinning - SOT427, simplified outline and symbol Description gate (g) Isense anode (a) drain (d) mounting base; connected to drain (d) Pin 6 7 Description cathode (k)

Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 10 V; Figure 2 and 3 Tmb = 100 C; VGS 10 V; Figure 2 IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM EDS(AL)S storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive avalanche energy Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 75 A; VDS 55 V; VGS 10 V; RGS 50 ; starting 25 C

Electrostatic discharge Vesd electrostatic discharge voltage, pins Human Body Model; = 100 pF; 6 kV
Current is limited by power dissipation chip rating. Continuous current is limited by package.
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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