Details, datasheet, quote on part number: BUK7905-40AIE
DescriptionBUK71/7905-40AIE; Trenchplus Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7905-40AIE datasheet
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: SOT263B (TO-220).

s ESD protection s Integrated current sensor s Q101 compliant s Standard level compatible.
s Variable Valve Timing for engines s Electrical Power Assisted Steering.
Table 1: Pin mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline
Description gate (g) Isense (Is) drain (d) Kelvin source (s) mounting base; connected to drain (d)

Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 10 V; Figure 2 and 3 Tmb = 100 C; VGS 10 V; Figure 2 IDM Ptot IGS(CL) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 75 A; VDS 40 V; VGS 10 V; RGS 50 ; starting 25 C Human Body Model; = 100 pF; 1.5 k

Electrostatic discharge Vesd electrostatic discharge voltage; all pins 6 kV
Current is limited by power dissipation chip rating. Continuous current is limited by package.
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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