Details, datasheet, quote on part number: BUK7880-55
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK7880-55; Trenchmos (tm) Transistor Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7880-55 datasheet
Find where to buy


Features, Applications

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS 10 V MAX. UNIT C m

PIN gate drain source drain (tab) DESCRIPTION

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tsp C On PCB in Fig.2 Tamb C On PCB in Fig.2 Tamb 100 C Tsp 25 C Tsp C On PCB in Fig.2 Tamb 25 C MIN. - 55 MAX. UNIT C

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

SYMBOL Rth j-sp Rth j-amb PARAMETER From junction to solder point From junction to ambient CONDITIONS Mounted on any PCB Mounted on PCB of Fig.18 TYP. 12 -

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = -55C VDS = VGS; = -55C VDS 55 V; VGS 0 V; VGS = 1 mA; VGS = 150C MIN. TYP. MAX. UNIT V m

Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss tr td off tf PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25C VGS 0 V; VDS = 1 MHz MIN. 1 TYP. MAX. UNIT pF ns

to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tsp = 25C Tsp 5 A; VGS 5 A; -dIF/dt = 100 A/s; VGS 30 V MIN. TYP. 38 0.2 MAX. 40 1.1 UNIT ns C

SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS 2.5 A; VDD 25 V; VGS 10 V; RGS 50 ; Tsp 25 C MIN. TYP. -

Fig.3. Safe operating area. Tsp ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.2. Normalised continuous drain current. ID% C = f(Tsp); conditions: VGS 10 V
Fig.4. Transient thermal impedance. Zth j-sp = f(t); parameter D = tp/T


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BUK7905-40AI Trenchplus Standard Level Fet<<<>>>features Integrated Current Sensor <<<>>>Standard Level Compatible. <<<>>><<<>>> <<<>>> Applications Variable Valve Timing For Engines <<<>>>Electrical Power Assisted
BUK7905-40AIE BUK71/7905-40AIE; Trenchplus Standard Level Fet
BUK7907-40ATC BUK71/7907-40ATC; Trenchplus Standard Level Fet
BUK7907-55ATE Trenchplus Standard Level Fet
BUK7908-40AIE BUK71/7908-40AIE; Trenchplus Standard Level Fet
BUK7C06-40AITE BAT160 Series; Schottky Barrier Double Diodes
BUK7C08-55AITE BUK7C08-55AITE; Trenchplus Standard Level Fet
BUK7C10-75AITE BAT160 Series; Schottky Barrier Double Diodes
BUK7E04-40A BUK75/76/7E04-40A; Trenchmos (tm) Standard Level Fet
BUK7L06-34ARC BUK7L06-34ARC; Trenchplus Standard Level Fet
BUK7L11-34ARC BUK7L11-34ARC; Trenchplus Standard Level Fet
BUK854-800A Insulated Gate Bipolar Transistor (IGBT)
BUK856-400 Insulated Gate Bipolar Transistor Protected Logic-level Igbt
BUK856-400IZ BUK856-400 IZ; Insulated Gate Bipolar Transistor Protected Logic-level Igbt
BUK856-800A Insulated Gate Bipolar Transistor (IGBT)
BUK866-400IZ Insulated Gate Bipolar Transistor Protected Logic-level Igbt
BUK9006-55A BUK9006-55A; Trenchmos (tm) Logic Level Fet
BUK9107-40ATC BUK9107-40ATC; Trenchplus Logic Level Fet
BUK9107-55ATE BAT160 Series; Schottky Barrier Double Diodes
BUK9120-48TC BUK9120-48TC; Powermos Transistor Voltage Clamped Logic Level Fet With Temperature Sensing Diodes
BUK9207-30B Trenchmos (tm) Logic Level Fet

74HC175D : 74HC175;74HCT175; Quad D-type Flip-flop With Reset; Positive-edge Trigger;; Package: SOT109-1 (SO16)

BYC8B-600 : High Speed Rectifier Diode Ultrafast, Low Switching Loss


PCA1624U : PCA16xx Series; 32 KHZ Watch Circuits With EePROM

PCA9516D : PCA9516; 5-channel I2C Hub;; Package: SOT109 (SO16)

PCK857SSTL16857 : PCK857; 50-150 MHZ Differential 1:10 Sdram Clock Driver;; Package: SOT362-1 (TSSOP48)

TDA8568Q/N2 : TDA8568Q; 4 X 25 W BTL Quad Car Radio Power Amplifier;; Package: SOT411-1 (DBS23P)

IP4064CX8LF : Integrated SIM Card Passive Filter Array With ESD Protection To IEC61000-4-2, Level 4 The IP4064CX8/LF and IP4364CX8/LF are 3-channel RC low-pass filter arrays which are designed to provide filtering of undesired RF signals in the 800 MHz to 3000 MHz frequency band. In addition, the IP4064CX8/LF an

ADC1215S105HN : Single 12-bit ADC 105 Msps With Input Buffer CMOS Or LVDS DDR Digital Outputs The ADC1215S is a single-channel 12-bit Analog-to-Digital Converter (ADC) optimized for high dynamic performances and low power consumption at sample rates up to 105 Msps. Pipelined architecture and output error correctio

Same catergory

2SA1981 : Small Signal Transistor, General Purpose Bipolar Transistor. Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage.

2SK1905 : N-channel MOS Silicon Fet, Very High-speed Switching Application. Low ON resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitating easy mounting. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Parameter Drain-to-Source Breakdown Voltage.

BZX84C20 : 20V, 0.35W Zener Diode. Repetitive Peak Forward Current (IFRM) Repetitive Peak Working Current (IZRM) Power Dissipation Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady.

KRC830U : BRTs. = Built in Bias Resistor ;; Package = US6. SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATING UNIT V mA CHARACTERISTIC.

MBR140SFT3 : 1A 40V Schottky Rectifier, Package: SOD-123FL, Pins=2. . using the Schottky Barrier principle with a large area metaltosilicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless.

MPSA92 : Small Signal High Voltage Pnp, Package: TO-92 (TO-226), Pins=3. Rating Collector -Emitter Voltage MPSA93 MPSA92 Collector -Base Voltage MPSA93 MPSA92 Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation = 25C Derate above 25C Total Device Dissipation = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO 1.5 12 TJ, Tstg +150 W mW/C C MPS A9x YWW mW mW/C VCBO.

SC2999 : NPN Epitaxial Planar Silicon Transistor ( HF Amp Applications ).

SRA2211 : PNP Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Collector.

FDMA1027PT : -20V Dual P-Channel PowerTrench MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration,.

03028BR333WJU : CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, BR, 0.033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0330 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 6.3 volts ; Mounting Style: Surface Mount Technology.

CB0G107M05005VR : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 4 V, 100 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 4 volts ; Leakage Current: 4 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 105 C (-67.

IRFR120NTRRPBF : 9.4 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2100 ohms ; Package Type: LEAD FREE, PLASTIC, DPAK-3 ; Number of units in IC: 1.

PB2020.102 : 1 ELEMENT, 0.85 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Application: General Purpose, Power Choke ; Inductance Range: 0.8500 microH ; Rated DC Current: 23700 milliamps ; Operating Temperature: -40 to 130 C (-40 to 266 F).

STP17N05L : 17 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 0.1200 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

T63X : RESISTOR, TRIMMER, CERMET, 13 TURN(S), 0.031; 0.06; 0.13; 0.25 W, 10 ohm - 2000000 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole ; Operating Temperature: -55 to 85 C (-67 to 185 F).

1100LCM0405MVN381D : CAP,AL2O3,10UF,16VDC,20% -TOL,20% +TOL. Bulk 5mm 5mmChip tape 4~ 8)5.0mm Lead forming 5mmTape 8mm orininal type(vertical)tape 5mm Lead forming C Lead forming B lLead forming 4~ 5)2.5mm Lead forming ( 4~ Code same with the series,detailed reference catalague Series MS LK Code MS LK Sleeve Color Black Dark-blue blue Yellow Purple Black-green (mm) Size L+2max / pcs/plastic bag / plastic bags/box.

0-C     D-L     M-R     S-Z