Details, datasheet, quote on part number: BUK7880-55
PartBUK7880-55
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK7880-55; Trenchmos (tm) Transistor Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7880-55 datasheet
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Features, Applications

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS 10 V MAX. UNIT C m

PIN gate drain source drain (tab) DESCRIPTION

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tsp C On PCB in Fig.2 Tamb C On PCB in Fig.2 Tamb 100 C Tsp 25 C Tsp C On PCB in Fig.2 Tamb 25 C MIN. - 55 MAX. UNIT C

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

SYMBOL Rth j-sp Rth j-amb PARAMETER From junction to solder point From junction to ambient CONDITIONS Mounted on any PCB Mounted on PCB of Fig.18 TYP. 12 -

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = -55C VDS = VGS; = -55C VDS 55 V; VGS 0 V; VGS = 1 mA; VGS = 150C MIN. TYP. MAX. UNIT V m

Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss tr td off tf PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25C VGS 0 V; VDS = 1 MHz MIN. 1 TYP. MAX. UNIT pF ns

to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tsp = 25C Tsp 5 A; VGS 5 A; -dIF/dt = 100 A/s; VGS 30 V MIN. TYP. 38 0.2 MAX. 40 1.1 UNIT ns C

SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS 2.5 A; VDD 25 V; VGS 10 V; RGS 50 ; Tsp 25 C MIN. TYP. -

Fig.3. Safe operating area. Tsp ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.2. Normalised continuous drain current. ID% C = f(Tsp); conditions: VGS 10 V
Fig.4. Transient thermal impedance. Zth j-sp = f(t); parameter D = tp/T

 

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