Details, datasheet, quote on part number: BUK7640-100A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK7640-100A; Trenchmos (tm) Transistor Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7640-100A datasheet
Cross ref.Similar parts: HUFA75631S3S, RSJ300N10TL, RSD201N10TL, STB30NF10T4
Find where to buy


Features, Applications

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 10 V MAX. UNIT C m

PIN 3 mb gate drain (no connection possible) source drain DESCRIPTION

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tmb 25 C Tmb 100 C Tmb 25 C Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 1.1 UNIT K/W

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55C VDS = VGS; = -55C VDS 100 V; VGS 0 V; VGS 20 V; VDS 0 V VGS = 175C MIN.

Tmb = 25C unless otherwise specified SYMBOL Ciss Coss Crss tr td off Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VGS 0 V; VDS = 1 MHz MIN. TYP. MAX. UNIT ns nH

Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad

= 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 37 A; VGS 37 A; -dIF/dt = 100 A/s; VGS 30 V TYP. MAX. 149 1.2 UNIT ns C

PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy
Fig.3. Safe operating area ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
1 For maximum permissible repetive avalanche current see fig.18. December 1999 3 Rev 1.000


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BUK764R0-55B BUK75/764R0-55B; Trenchmos (tm) Standard Level Fet
BUK764R3-40B BUK75/764R3-40B; Trenchmos (tm) Standard Level Fet
BUK765R2-40B BUK75/765R2-40B; Trenchmos (tm) Standard Level Fet
BUK7660-100A BUK7560-100A; BUK7660-100A; Trenchmos (tm) Standard Level Fet
BUK7675-100A BUK7575-100A; BUK7675-100A; Trenchmos (tm) Standard Level Fet
BUK7675-55 BUK7675-55; Trenchmos (tm) Transistor Standard Level Fet
BUK7675-55A BUK7575-55A; BUK7675-55A; Trenchmos (tm) Standard Level Fet
BUK7728-55A BUK7728-55A; Trenchmos (tm) Standard Level Fet
BUK7735-55A BUK7735-55A; Trenchmos (tm) Standard Level Fet
BUK7775-55A BUK7775-55A; Trenchmos (tm) Standard Level Fet
BUK78150-55 BUK78150-55; Trenchmos (tm) Transistor Standard Level Fet
BUK78150-55A BAT160 Series; Schottky Barrier Double Diodes
BUK7830-30 Trenchmos Transistor Standard Level Fet
BUK7880-55 BUK7880-55; Trenchmos (tm) Transistor Standard Level Fet
BUK7905-40AI Trenchplus Standard Level Fet<<<>>>features Integrated Current Sensor <<<>>>Standard Level Compatible. <<<>>><<<>>> <<<>>> Applications Variable Valve Timing For Engines <<<>>>Electrical Power Assisted
BUK7905-40AIE BUK71/7905-40AIE; Trenchplus Standard Level Fet
BUK7907-40ATC BUK71/7907-40ATC; Trenchplus Standard Level Fet
BUK7907-55ATE Trenchplus Standard Level Fet

BT134SERIES : Triacs

BZX79-C30 : BZA800A-series; Quadruple Esd Transient Voltage Suppressor

HEF4015BTD : HEF4015B; Dual 4-bit Static Shift Register;; Package: SOT109-1 (SO16), SOT38-1 (DIP16)

HEF4020B : HEF4020B; 14-stage Binary Counter

HEF4077BP : HEF4077B Gates; Quadruple Exclusive-nOR GATE;; Package: SOT108-1 (SO14), SOT27

LPC2290 : 16/32-bit Arm Microcontrollers With CAN, 10-bit ADC And External Memory Interfacethe LPC2290 is Based on a 16/32 Bit ARM7TDMI-STM Cpu With Real-time Emulation And Embedded Trace Support. For Critical Code Size Applications, The Alternative 16-bit Thumb Mode Reduces Code BY More Than 30pct With

P87C51FA4N : 80C51 architecture 8XC54/58 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA+; 80C51 8-bit Microcontroller Family 8K-64K/256-1K OTP/ROM/ROMless, Low Voltage 2.7V-5.5V), Low Power, High Speed (33 MHz);; Package: SOT129-1 (DIP40), SOT187-2 (PLCC44)

PMBZ5245B : PMBZ5226B to PMBZ5257B; Voltage Regulator Diodes

TDA3604Q : TDA3604Q; TDA3604TH; Multiple Voltage Regulators With External Reset Delay And Switch

TDA8714T/7 : TDA8714; 8-bit High-speed Analog-to-digital Converter;; Package: SOT137 (SO24), SOT340-1 (SSOP24)

PCA9685PW/Q900 : PCA9685 - 16-channel, 12-bit PWM Fm+ I2C-bus LED Controller The PCA9685 is an I2C-bus controlled 16-channel LED controller optimized for LCD Red/Green/Blue/Amber (RGBA) color backlighting applications. Each LED output has its own 12-bit resolution (4096 steps) fixed frequency individual PWM control

Same catergory

2SC4467 : . Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO PC Tj Tstg Ratings to +150 Unit C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=10V, f=1MHz 125C DC Curr ent Gain h FE Transient Thermal Resistance ( C/W) 3 .

BAS41 : Schottky Barrier Single And Dual Diode.

MJ400 : Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 325V ;; IC(cont) = 0.25A ;; HFE(min) = 30 ;; HFE(max) = 300 ;; @ Vce/ic = 10V / 50mA ;; FT = 15MHz ;; PD = 2.5W.

MMBD6050 : Small Signal Switching Diodes.

STTH3003 : 300V Ultra-Fast Diodes. High Frequency Secondary Rectifier. MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY 40 ns Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency to DC converters. Packaged in TO-247 this device is intended.

UCC3957 : Three - Four Cell Lithium-ion Protector Circuit. Three - Four Cell Lithium-Ion Protector Circuit Three or Four Cell Operation Two Tier Overcurrent Limiting 30A Typical Supply Current Consumption 3.5A Typical Supply Current in Sleep Mode Smart Discharge Minimizes Losses in Overcharge Mode to 20V VDD Supply Range Highly Accurate Internal Voltage Reference Externally Adjustable Delays in Overcurrent.

05002-150AJMC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

05002-1R0ADMB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000001 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-6 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

A04220F0.07 : RES NET,THICK FILM,22 OHMS,200WV,1% +/-TOL,-100,100PPM TC,2712 CASE. s: Configuration: Chip Array ; Category / Application: General Use.

AH1601CI : DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

IRH3250 : 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.1100 ohms ; Package Type: HERMETIC SEALED, CERAMIC PACKAGE-2 ; Number of units in IC: 1.

S160K08D295J : RESISTOR, TEMPERATURE DEPENDENT, NTC. s: Category / Application: General Use.

V3F418A400Y3GDM : RESISTOR, VOLTAGE DEPENDENT, 18 V, 0.1 J, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, 0612 ; Operating DC Voltage: 18 volts.

0-C     D-L     M-R     S-Z