Details, datasheet, quote on part number: BUK7640-100A
PartBUK7640-100A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK7640-100A; Trenchmos (tm) Transistor Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7640-100A datasheet
Cross ref.Similar parts: HUFA75631S3S, RSJ300N10TL, RSD201N10TL, STB30NF10T4
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Features, Applications

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 10 V MAX. UNIT C m

PIN 3 mb gate drain (no connection possible) source drain DESCRIPTION

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tmb 25 C Tmb 100 C Tmb 25 C Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 1.1 UNIT K/W

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55C VDS = VGS; = -55C VDS 100 V; VGS 0 V; VGS 20 V; VDS 0 V VGS = 175C MIN.

Tmb = 25C unless otherwise specified SYMBOL Ciss Coss Crss tr td off Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VGS 0 V; VDS = 1 MHz MIN. TYP. MAX. UNIT ns nH

Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad

= 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 37 A; VGS 37 A; -dIF/dt = 100 A/s; VGS 30 V TYP. MAX. 149 1.2 UNIT ns C

PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy
Fig.3. Safe operating area ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
1 For maximum permissible repetive avalanche current see fig.18. December 1999 3 Rev 1.000

 

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