Details, datasheet, quote on part number: BUK763R1-40B
DescriptionBUK75/763R1-40B; Trenchmos (tm) Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK763R1-40B datasheet
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOSTM technology. Product availability: SOT404 (D2-PAK).

s Very low on-state resistance 175 C rated s Q101 compliant s Standard level compatible.
s Automotive systems s Motors, lamps and solenoids 12 V loads s General purpose power switching.

Table 1: Pin 3 mb Pinning - SOT78 and SOT404, simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)

Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 10 V; Figure 2 and 3 Tmb = 100 C; VGS 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 75 A; VDS 40 V; VGS 10 V; RGS 50 ; starting Tmb 25 C

Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
Current is limited by power dissipation chip rating Continuous current is limited by package.
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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