Details, datasheet, quote on part number: BUK7620-100A
PartBUK7620-100A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK7520-100A; BUK7620-100A; Trenchmos (tm) Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7620-100A datasheet
Cross ref.Similar parts: SUM60N10-17, NVB6412ANT4G, STB80NF10T4, STB40NF10T4, STB80NF12T4
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: (D 2-PAK).

TrenchMOSTM technology Q101 compliant 175 C rated Standard level compatible.

s Automotive and general purpose power switching: 24 V and 42 V loads x Motors, lamps and solenoids.

Table 1: Pin 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
drain (d) source (s) mounting base; connected to drain (d)

Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS 10 V Tmb 25 C VGS 175 C Typ Max Unit W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS 10 V; Figure 2 and 3 Tmb = 100 C; VGS 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 60 A; VDS 100 V; VGS 10 V; RGS 50 ; starting Tmb 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 RGS 20 k Conditions Min Max Unit A mJ

Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


 

Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BUK7620-55 Trenchmos Transistor Standard Level Fet
BUK7620-55A BUK7520-55A; BUK7620-55A; Trenchmos (tm) Standard Level Fet
BUK7621-30 Trenchmos Transistor Standard Level Fet: 30v, 50a
BUK7623
BUK7623-75A BUK7523-75A; BUK7623-75A; Trenchmos (tm) Standard Level Fet
BUK7624-55 BUK7624-55; Trenchmos (tm) Transistor Standard Level Fet
BUK7624-55A BUK7524-55A; BUK7624-55A; Trenchmos (tm) Standard Level Fet
BUK7626-100B BUK75/7626-100B; Trenchmos (tm) Standard Level Fet
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BUK7628-55 BUK7528-55A; BUK7628-55A; Trenchmos (tm) Transistor Standard Level Fet
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BUK7635
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BUK7635-55A BUK7535-55A; BUK7635-55A; Trenchmos (tm) Standard Level Fet
BUK763R1-40B BUK75/763R1-40B; Trenchmos (tm) Standard Level Fet
BUK7640-100A BUK7640-100A; Trenchmos (tm) Transistor Standard Level Fet
BUK764R0-55B BUK75/764R0-55B; Trenchmos (tm) Standard Level Fet
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