Details, datasheet, quote on part number: BUK7618-55
PartBUK7618-55
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionTrenchmos Transistor Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7618-55 datasheet
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Features, Applications

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 10 V MAX. UNIT C m

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tmb 25 C Tmb 100 C Tmb 25 C Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 1.2 UNIT K/W

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55C VDS = VGS; = -55C VDS 55 V; VGS 0 V; VGS 10 V; VDS = 1 mA; VGS = 175C MIN. TYP.

Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss tr td off Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS 25 A VGS 0 V; VDS = 1 MHz MIN. 6 TYP. MAX. UNIT ns nH

VDD 25 A; VGS = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad

= 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 50 A; VGS 50 A; -dIF/dt = 100 A/s; VGS 30 V TYP. MAX. 200 1.2 UNIT ns C

SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS 50 A; VDD 25 V; VGS 10 V; RGS 50 ; Tmb 25 C MIN. TYP. -

Fig.3. Safe operating area. Tmb ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.2. Normalised continuous drain current. ID% C = f(Tmb); conditions: VGS 5 V
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

 

Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BUK7620-100A BUK7520-100A; BUK7620-100A; Trenchmos (tm) Standard Level Fet
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BUK7620-55A BUK7520-55A; BUK7620-55A; Trenchmos (tm) Standard Level Fet
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BUK7623
BUK7623-75A BUK7523-75A; BUK7623-75A; Trenchmos (tm) Standard Level Fet
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BUK7624-55A BUK7524-55A; BUK7624-55A; Trenchmos (tm) Standard Level Fet
BUK7626-100B BUK75/7626-100B; Trenchmos (tm) Standard Level Fet
BUK7628-100A BUK7528-100A; BUK7628-100A; Trenchmos (tm) Transistor Standard Level Fet
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BUK7635
BUK7635-100A BUK7535-100A; BUK7635-100A; Trenchmos (tm) Standard Level Fet
BUK7635-55 BUK7635-55; Trenchmos (tm) Transistor Standard Level Fet
BUK7635-55A BUK7535-55A; BUK7635-55A; Trenchmos (tm) Standard Level Fet
BUK763R1-40B BUK75/763R1-40B; Trenchmos (tm) Standard Level Fet
BUK7640-100A BUK7640-100A; Trenchmos (tm) Transistor Standard Level Fet
BUK764R0-55B BUK75/764R0-55B; Trenchmos (tm) Standard Level Fet
BUK764R3-40B BUK75/764R3-40B; Trenchmos (tm) Standard Level Fet
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