Details, datasheet, quote on part number: BUK7535-100A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionBUK7535-100A; BUK7635-100A; Trenchmos (tm) Standard Level Fet
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BUK7535-100A datasheet
Cross ref.Similar parts: STP40NF10, STP30NF10, CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS
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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: SOT404 (D2-PAK).

TrenchMOSTM technology Q101 compliant 175 °C rated Standard level compatible.

s Automotive and general purpose power switching: 24 V and 42 V loads x Motors, lamps and solenoids.

Table 1: Pin 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
drain (d) source (s) mounting base; connected to drain (d)

Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS 10 V Tmb 25 °C VGS 175 °C Typ Max Unit W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS 10 V; Figure 2 and 3 Tmb = 100 °C; VGS 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb 25 °C Tmb = 25 °C; pulsed; 10 µs unclamped inductive load; 25 A; VDS 100 V; VGS 10 V; RGS 50 ; starting Tmb 25 °C Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS 20 k Conditions Min Max Unit A mJ

Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
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BUK755R2-40B BUK75/765R2-40B; Trenchmos (tm) Standard Level Fet
BUK7560-100A BUK7560-100A; BUK7660-100A; Trenchmos (tm) Standard Level Fet
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BUK7606-55B BUK75/7606-55B; Trenchmos (tm) Standard Level Fet
BUK7606-75B BUK75/7606-75B; Trenchmos (tm) Standard Level Fet
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