Details, datasheet, quote on part number: BF1211R
PartBF1211R
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel Dual-gate MOS-FETs<<<>>>enhancement Type N-channel Field-effect Transistor With Source And Substrate Interconnected. Integrated Diodes Between Gates And Source Protect Against Excessive Input Voltage Surges. The BF1211, BF1211R And BF1211WR Are Encapsulated in The SOT143B, SOT143R And SOT343R Plastic Packages Respectively. <<<>>><<<>>> <<<>>> Features Short Channel Transistor With High Forward Transfer Admittance to Input Capacitance Ratio <<<>>>Low Noise Gain Controlled Amplifier <<<>>>Excellent Low Frequency Noise Performance <<<>>>Partly Internal Self-biasing Circuit to Ensure Good Cross-modulation Performance During Agc And Good DC Stabilization. <<<>>><<<>>> <<<>>> Applications Gain Controlled Low Noise VHF And UHF Amplifiers For 5 V Digital And Analog Television Tuner Applications.
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1211R datasheet
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PackagesSOT143B
  

 

Features, Applications

FEATURES Typical GSM EDGE performance at a supply voltage V: Output power W Gain dB Efficiency 19% ACPR < -63 dBc at 400 kHz rms EVM 1.2% peak EVM < 3.6%. Low distortion to CDMA signals Excellent 2-tone performance Low die temperature due to copper flange Integrated temperature compensated bias 50 input/output impedance Flat gain over frequency band. APPLICATIONS Base station RF power amplifiers in the to 1880 MHz frequency range GSM, GSM EDGE, multi carrier applications Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 10 W LDMOS power amplifier module for base station amplifier applications in the to 1880 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 C; = 50. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BGF1801-10 - DESCRIPTION f (MHz) 1880 VS (V) 26 PL (W) 3.5 Gp (dB)

PINNING - SOT365C PIN 2 3 Flange RF input VS RF output ground DESCRIPTION
plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 3 in-line leads

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PD PL Tstg Tmb DC supply voltage input drive power load power storage temperature operating mounting base temperature PARAMETER MIN.

CHARACTERISTICS Tmb = 25 C; to 1880 MHz; 50 ; unless otherwise specified. SYMBOL IDQ P1dB Gp Gp(freq) Gp(pwr) GOB VSWRin H2 H3 PARAMETER quiescent current (pin 2) load power gain flatness over frequency range gain flatness over power band 5 W out of band gain efficiency input VSWR second harmonic third harmonic CONDITIONS 1 dB gain compression MIN. 220 TYP. MAX. 280 UNIT W dB

GSM EDGE MODE (PL 3.5 W average) SR200 SR400 EVMrms EVMM Notes 1. Gpi is small signal in-band gain. 2. As defined by ETSI. rms EDGE signal distortion peak EDGE signal distortion spectral regrowth 200 kHz; 3.5 W; note 2 400 kHz; 3.5 W; note 2 dBc %


 

Related products with the same datasheet
BF1211WR
BGF1801-10
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BF1211WR N-channel Dual-gate MOS-FETs<<<>>>enhancement Type N-channel Field-effect Transistor With Source And Substrate Interconnected. Integrated Diodes Between Gates And Source Protect Against Excessive Input
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