Details, datasheet, quote on part number: BF1208
PartBF1208
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionDual N-channel dual gate MOSFET
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.



Features
Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio



Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
digital and analog television tuners
professional communication equipment
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1208 datasheet
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PackagesSOT666 (SS-Mini)
  

 

Features, Applications

The is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

s Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias s Internal switch to save external components s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio

s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage x digital and analog television tuners x professional communication equipment

Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot |yfs| drain-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance Tsp = 1 MHz amplifier 19 mA amplifier mA Ciss(G1) input capacitance = 1 MHz amplifier A amplifier B Crss NF Xmod reverse transfer capacitance = 1 MHz noise figure cross-modulation amplifier = 400 MHz amplifier = 800 MHz input level for 40 dB AGC amplifier A amplifier B Tj

Table 2: Pin Discrete pinning Description gate1 (AMP gate2 gate1 (AMP B) drain (AMP B) source drain (AMP A)

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Table 3: Ordering information Package Name BF1208 Description plastic surface mounted package; 6 leads Version SOT666 Type number

Table 4: BF1208 Marking codes Marking code 2L Type number

Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS IG1 IG2 Ptot Tstg Tj

Parameter drain-source voltage (DC) drain current (DC) gate1 current gate2 current total power dissipation storage temperature junction temperature

Koninklijke Philips Electronics N.V. 2005. All rights reserved.

 

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